Presentation	2008-07-17 Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-κ/Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki SATO, Yoshihiro SUGITA, Takayuki AOYAMA, Yasuo NARA, Yuzuru OHJI,
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Abstract(in English)	Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher interface defect density between Si substrate and oxide but also different nature diffect condtion (P_b center) compared to (100) surface. Both P_ and P_ defect exist on (100), on the other hand, only P_ defect was obserbed on (110) surface. Based on this differenet nature of interface defect, NBTI on (110) is better than that on (100). On the other hand, 1/f noise on (110) much larger than that on (100). These phenomena can be explained with the physical characteristics difference between P_ and P_.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	NBTI / 1/f noise / (110) / P_b center
Paper #	SDM2008-128,ICD2008-38
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Conference Information
Committee	ICD
Conference Date	2008/7/10(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-κ/Metal Gate pMOSFETs between (100) and (110) Crystal Orientations
Sub Title (in English)
Keyword(1)	NBTI
Keyword(2)	1/f noise
Keyword(3)	(110)
Keyword(4)	P_b center
1st Author's Name	Motoyuki SATO
1st Author's Affiliation	Semiconductor Leading Edge Technologies Inc.()
2nd Author's Name	Yoshihiro SUGITA
2nd Author's Affiliation	Semiconductor Leading Edge Technologies Inc.
3rd Author's Name	Takayuki AOYAMA
3rd Author's Affiliation	Semiconductor Leading Edge Technologies Inc.
4th Author's Name	Yasuo NARA
4th Author's Affiliation	Semiconductor Leading Edge Technologies Inc.
5th Author's Name	Yuzuru OHJI
5th Author's Affiliation	Semiconductor Leading Edge Technologies Inc.
Date	2008-07-17
Paper #	SDM2008-128,ICD2008-38
Volume (vol)	vol.108
Number (no)	140
Page	pp.pp.-
#Pages	6
Date of Issue