Presentation 2008-01-31
Half adder operation based on 2-output single-electron device using a Si nanodot array
Takuya KAIZAWA, Minkyu Jo, Masashi ARITA, Akira FUJIWARA, Kenji YAMAZAKI, Yukinori Ono, Hiroshi INOKAWA, Yasuo TAKAHASHI,
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Abstract(in English) Single-electron devices (SEDs) have been studied for future large-scale integrated circuits because of their very low power even in highly integrated circuits. We take advantage of special feature of SEDs, capability of multiple gates and multiple outputs, which enable the device to operate with high functionalities. We proposed a functional Si-nanodot-array device, which has two input gates, a control gate and two outputs. We actually fabricated such a device with Si MOS processes and tested its basic operation experimentally. We demonstrated that the device operates as a half adder with just one device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) single electron / nanodot array / Coulomb blockade / half adder
Paper # ED2007-250,SDM2007-261
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Conference Information
Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Half adder operation based on 2-output single-electron device using a Si nanodot array
Sub Title (in English)
Keyword(1) single electron
Keyword(2) nanodot array
Keyword(3) Coulomb blockade
Keyword(4) half adder
1st Author's Name Takuya KAIZAWA
1st Author's Affiliation Graduate School of Information Science and Technology, Hokkaido Univ.()
2nd Author's Name Minkyu Jo
2nd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido Univ.
3rd Author's Name Masashi ARITA
3rd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido Univ.
4th Author's Name Akira FUJIWARA
4th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation
5th Author's Name Kenji YAMAZAKI
5th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation
6th Author's Name Yukinori Ono
6th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation
7th Author's Name Hiroshi INOKAWA
7th Author's Affiliation Research Institute of Electronics, Shizuoka University
8th Author's Name Yasuo TAKAHASHI
8th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido Univ.
Date 2008-01-31
Paper # ED2007-250,SDM2007-261
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 5
Date of Issue