Presentation 2008-01-30
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope
Maciej Ligowski, Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar, Ryszard Jablonski, Michiharu Tabe,
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Abstract(in English) Dopant ionization was investigated by Kelvin Probe Force Microscope (KFM) measurements of surface potential of the thin silicon-on-insulator field-effect-transistor (SOI-FET) at different temperatures. In the resultant images it is observed that the surface potential is modulated by the temperature which indicates that the number of ionized dopant is changing. Also complementary simulation based on Poisson equation was performed. The results are qualitatively in agreement with the measured values. They show decreasing number of carriers when temperature is lowered. This result and interpretation are consistent with the previous freeze-out effect studies. However, direct observation of freeze-out effect hasn't been reported yet. We believe this is a significant progress towards single dopant observation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) dopant ionization / freeze-out effect / KFM / Kelvin Probe Force Microscope
Paper # ED2007-239,SDM2007-250
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Conference Information
Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope
Sub Title (in English)
Keyword(1) dopant ionization
Keyword(2) freeze-out effect
Keyword(3) KFM
Keyword(4) Kelvin Probe Force Microscope
1st Author's Name Maciej Ligowski
1st Author's Affiliation Research Institute of Electronics, Shizuoka University:Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology()
2nd Author's Name Ratno Nuryadi
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Akihiro Ichiraku
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Miftahul Anwar
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Ryszard Jablonski
5th Author's Affiliation Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology
6th Author's Name Michiharu Tabe
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2008-01-30
Paper # ED2007-239,SDM2007-250
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 6
Date of Issue