| Presentation | 2006-11-24 Surface passivation dependency of 1/f noise characterization in AlGaN/GaN HEMT T. Matsushima, M. Nakajima, K. Nomoto, M. Satoh, T. Nakamura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is known that an electric characteristic of AlGaN/GaN HEMT is greatly influenced according to the kind and the film thickness of the surface passivation. In this research, the influence that the surface passivation in AlGaN/GaN HEMT gave to 1/f noise was examined. The influence that the growth condition of surface passivation (SiN film) exerted on 1/f noise characteristic was evaluated and examined. The device where the surface protection film formed by the PECVD method piles up was able to be decreased compared with the device where the surface passivation formed by the spatter method piles up and to decrease input conversion drain current spectrum density Svg to about the half. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / 1/f noise / Surface Passivation / PECVD / Spatter |
| Paper # | R2006-36,ED2006-181,SDM2006-199 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 2006/11/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface passivation dependency of 1/f noise characterization in AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | 1/f noise |
| Keyword(3) | Surface Passivation |
| Keyword(4) | PECVD |
| Keyword(5) | Spatter |
| 1st Author's Name | T. Matsushima |
| 1st Author's Affiliation | Hosei University() |
| 2nd Author's Name | M. Nakajima |
| 2nd Author's Affiliation | Hosei University |
| 3rd Author's Name | K. Nomoto |
| 3rd Author's Affiliation | Hosei University |
| 4th Author's Name | M. Satoh |
| 4th Author's Affiliation | Hosei University |
| 5th Author's Name | T. Nakamura |
| 5th Author's Affiliation | Hosei University |
| Date | 2006-11-24 |
| Paper # | R2006-36,ED2006-181,SDM2006-199 |
| Volume (vol) | vol.106 |
| Number (no) | 377 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |