| Presentation | 2006-11-24 Effects of heterointerface flatness on device performance of InP-based HEMT : Reduction of interface roughness scattering using (411)A-oriented substrate Issei WATANABE, Keisuke SHINOHARA, Takahiro KITADA, Satoshi SHIMOMURA, Akira ENDOH, Yoshimi YAMASHITA, Takashi MIMURA, Satoshi HIYAMIZU, Toshiaki MATSUI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An extremely high transconductance g_m of 2.25S/mm and a cutoff frequency f_T of 310GHz was achieved at a cryogenic temperature (16K) in a 195-nm-gate In_<0.75>Ga_<0.25>As/In_<0.52>Al_<0.48>As high electron mobility transistor (HEMT) with (411)A super-flat interfaces (effectively atomically flat heterointerfaces over a wafer-size area). In this contribution, we investigated dc and radio frequency (RF) characteristics at 300K and 16K for the In_<0.75>Ga_<0.25>As/In_<0.52>Al_<0.48>As HEMTs fabricated on the (411)A- and conventional (100)-oriented InP substrates to clarify the impact of heterointerface flatness on device performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP-HEMT / (411)A super-flat interfaces / Transconductance (g_m) / Cutoff frequency (f_T) / Delay-time analysis |
| Paper # | R2006-35,ED2006-180,SDM2006-198 |
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| Committee | R |
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| Conference Date | 2006/11/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of heterointerface flatness on device performance of InP-based HEMT : Reduction of interface roughness scattering using (411)A-oriented substrate |
| Sub Title (in English) | |
| Keyword(1) | InP-HEMT |
| Keyword(2) | (411)A super-flat interfaces |
| Keyword(3) | Transconductance (g_m) |
| Keyword(4) | Cutoff frequency (f_T) |
| Keyword(5) | Delay-time analysis |
| 1st Author's Name | Issei WATANABE |
| 1st Author's Affiliation | National Institute of Info. & Com. Tech.() |
| 2nd Author's Name | Keisuke SHINOHARA |
| 2nd Author's Affiliation | National Institute of Info. & Com. Tech.:(Present address)Rockwell Scientific Company LLC |
| 3rd Author's Name | Takahiro KITADA |
| 3rd Author's Affiliation | Graduate School of Engineering Science, Osaka University:(Present address)The University of Tokushima |
| 4th Author's Name | Satoshi SHIMOMURA |
| 4th Author's Affiliation | Graduate School of Engineering Science, Osaka University:(Present address)Ehime University |
| 5th Author's Name | Akira ENDOH |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Yoshimi YAMASHITA |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Takashi MIMURA |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Satoshi HIYAMIZU |
| 8th Author's Affiliation | Graduate School of Engineering Science, Osaka University:(Present address)Nara National College of Technology |
| 9th Author's Name | Toshiaki MATSUI |
| 9th Author's Affiliation | National Institute of Info. & Com. Tech. |
| Date | 2006-11-24 |
| Paper # | R2006-35,ED2006-180,SDM2006-198 |
| Volume (vol) | vol.106 |
| Number (no) | 377 |
| Page | pp.pp.- |
| #Pages | 5 |
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