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| Presentation | 2006-11-24 15:15 Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate -- Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) |
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| PDF Download Link | Link to ES Tech. Rep. Archives:  ED2006-180 SDM2006-198 |
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