| Presentation | 2006-10-06 Effects of damage reduction due to N^+_2 ion on growth of InN film on Si substrate by ECR-MBE method Tokuo YODO, Teruya SHIMADA, Sumito TAGAWA, Ryo NISHIMOTO, Shiro HIDAKA, Keita ISHII, Hroshi SEGAWA, Junichi HIRAKAWA, Yoshiyuki HARADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The problem of ECR-MBE method is to generate the N_2^+ ion from ECR plasma during growth that damages the film. The bad influence of ion damage becomes bigger problem in InN growth. There are two methods using the substrate bias and the magnetic field in order to control the ion damage. However, we have investigated influence of the plasma condition on the crystalline quality and tried to improve this problem in this report. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hexagonal InN / ECR-plasma assisted MBE / ECR-plasma / Si(111) substrate / ion damage / PL emission |
| Paper # | ED2006-175,CPM2006-112,LQE2006-79 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of damage reduction due to N^+_2 ion on growth of InN film on Si substrate by ECR-MBE method |
| Sub Title (in English) | |
| Keyword(1) | Hexagonal InN |
| Keyword(2) | ECR-plasma assisted MBE |
| Keyword(3) | ECR-plasma |
| Keyword(4) | Si(111) substrate |
| Keyword(5) | ion damage |
| Keyword(6) | PL emission |
| 1st Author's Name | Tokuo YODO |
| 1st Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology() |
| 2nd Author's Name | Teruya SHIMADA |
| 2nd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 3rd Author's Name | Sumito TAGAWA |
| 3rd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 4th Author's Name | Ryo NISHIMOTO |
| 4th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 5th Author's Name | Shiro HIDAKA |
| 5th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 6th Author's Name | Keita ISHII |
| 6th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 7th Author's Name | Hroshi SEGAWA |
| 7th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 8th Author's Name | Junichi HIRAKAWA |
| 8th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 9th Author's Name | Yoshiyuki HARADA |
| 9th Author's Affiliation | Applied Physics, Osaka Institute of Technology |
| Date | 2006-10-06 |
| Paper # | ED2006-175,CPM2006-112,LQE2006-79 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |