| Presentation | 2006-01-26 Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature : Fabrication using SOI and measurements of its characteristics Katsuhiko NISHIGUCHI, Yukinori ONO, Akira FUJIWARA, Hiroshi INOKAWA, Yasuo TAKAHASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-electron transfer and subsequent detection using a MOSFET technology are demonstrated at room temperature. The turnstile, which is composed of two Si-wire FETs with a fine gate, enables us to transfer single electrons by opening and closing the two FETs alternately. The MOSFET 50-nm-half-pitch technology and optimized operating conditions allow single-electron transfer at room temperature. High speed transfer and long retention are also achieved by MOSFET-based operation. The electrometer, which has a tiny channel, is carefully positioned close to the memory node into which electrons are transferred with the turnstile, thereby leading to a high charge sensitivity of 0.005e/〓Hz@2Hz at room temperature. We have applied these features to single-electron-based circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single-electron transfer / single-electron detection / SOI / MOSFET / room-temperature operation |
| Paper # | ED2005-228,SDM2005-240 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature : Fabrication using SOI and measurements of its characteristics |
| Sub Title (in English) | |
| Keyword(1) | single-electron transfer |
| Keyword(2) | single-electron detection |
| Keyword(3) | SOI |
| Keyword(4) | MOSFET |
| Keyword(5) | room-temperature operation |
| 1st Author's Name | Katsuhiko NISHIGUCHI |
| 1st Author's Affiliation | NTT Basic Research Laboratories() |
| 2nd Author's Name | Yukinori ONO |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | Akira FUJIWARA |
| 3rd Author's Affiliation | NTT Basic Research Laboratories |
| 4th Author's Name | Hiroshi INOKAWA |
| 4th Author's Affiliation | NTT Basic Research Laboratories |
| 5th Author's Name | Yasuo TAKAHASHI |
| 5th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University |
| Date | 2006-01-26 |
| Paper # | ED2005-228,SDM2005-240 |
| Volume (vol) | vol.105 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |