| Presentation | 2017-12-01 Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | ED2017-62,CPM2017-105,LQE2017-75 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of PBTI reliability in GaN-MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Yosuke Kajiwara |
| 1st Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 2nd Author's Name | Toshiya Yonehara |
| 2nd Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 3rd Author's Name | Daimotsu Kato |
| 3rd Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 4th Author's Name | Kenjiro Uesugi |
| 4th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 5th Author's Name | Aya Shindome |
| 5th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 6th Author's Name | Masahiko Kuraguchi |
| 6th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 7th Author's Name | Akira Mukai |
| 7th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 8th Author's Name | Hiroshi Ono |
| 8th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 9th Author's Name | Miki Yumoto |
| 9th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| 10th Author's Name | Akira Yoshioka |
| 10th Author's Affiliation | Advanced Discrete Development Center, Toshiba Device & Storage Corporation(Toshiba) |
| 11th Author's Name | Shinya Nunoue |
| 11th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
| Date | 2017-12-01 |
| Paper # | ED2017-62,CPM2017-105,LQE2017-75 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.65-68(ED), pp.65-68(CPM), pp.65-68(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |