| Presentation | 2016-12-19 Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu, Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai, Takashi Mimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain-side recess lengths Lrd’s at 300 and 16 K. The kink phenomenon was seen in the current-voltage (I-V) characteristics for all the measured HEMTs at 16 K. The peak cutoff frequency fT decreases with increasing Lrd both at 300 and 16 K. On the other hand, the maximum oscillation frequency fmax shows very complicated behavior both at 300 and 16 K. We found that there exists the most suitable Lrd value to increase fmax at each temperature and/or drain-source voltage Vds. Furthermore, we extracted the equivalent circuit parameters and discussed the trend of fT and fmax values. fT can be expressed by transconductance gm and gate capacitance Cg. gm decreases with increasing Lrd and Cg increases with increasing Lrd. fmax is mainly reflects the trend of drain conductance gd and gate-drain capacitance Cgd. The effect of gd is relatively large in the the longer Lrd region and the effect of Cgd is relatively large in the shorter Lrd region. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP HEMT / InAlAs/InGaAs / Cryogenic characteristics / Drain-side recess length / Cutoff frequency / Maximum oscillation frequency / Equivalent circuit parameters |
| Paper # | ED2016-81 |
| Date of Issue | 2016-12-12 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/12/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(JAIST) |
| Assistant | Masataka Higashiwaki(NICT) / Toshiyuki Oishi(Saga Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs |
| Sub Title (in English) | |
| Keyword(1) | InP HEMT |
| Keyword(2) | InAlAs/InGaAs |
| Keyword(3) | Cryogenic characteristics |
| Keyword(4) | Drain-side recess length |
| Keyword(5) | Cutoff frequency |
| Keyword(6) | Maximum oscillation frequency |
| Keyword(7) | Equivalent circuit parameters |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 4th Author's Name | Tsuyoshi Takahashi |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 5th Author's Name | Shoichi Shiba |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 6th Author's Name | Yasuhiro Nakasha |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 7th Author's Name | Taisuke Iwai |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 8th Author's Name | Takashi Mimura |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology(Fujitsu Labs./NICT) |
| Date | 2016-12-19 |
| Paper # | ED2016-81 |
| Volume (vol) | vol.116 |
| Number (no) | ED-375 |
| Page | pp.pp.7-12(ED), |
| #Pages | 6 |
| Date of Issue | 2016-12-12 (ED) |