Presentation 2016-07-23
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # ED2016-27
Date of Issue 2016-07-16 (ED)

Conference Information
Committee ED
Conference Date 2016/7/23(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokyo Metropolitan Univ. Minami-Osawa Campus, International House
Topics (in Japanese) (See Japanese page)
Topics (in English) Semiconductor Processes and Devices
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Sub Title (in English)
Keyword(1)
1st Author's Name Shiro Ozaki
1st Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
2nd Author's Name Kozo Makiyama
2nd Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
3rd Author's Name Toshihiro Ohki
3rd Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
4th Author's Name Yoichi Kamada
4th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
5th Author's Name Masaru Sato
5th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
6th Author's Name Yoshitaka Niida
6th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
7th Author's Name Naoya Okamoto
7th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
8th Author's Name Kazukiyo Joshin
8th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Lab.)
Date 2016-07-23
Paper # ED2016-27
Volume (vol) vol.116
Number (no) ED-158
Page pp.pp.1-4(ED),
#Pages 4
Date of Issue 2016-07-16 (ED)