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Presentation |
2016-07-23 14:00
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) |
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ED2016-27 Link to ES Tech. Rep. Archives: ED2016-27 |
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