| Presentation | 2016-04-21 A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave power transmission systems, such as space solar power systems. Low RC product and high breakdown voltage are required to realize high efficiency. In this paper, the 5.8 GHz-band rectifier, with the high breakdown voltage GaAs Schottky barrier diode (SBD) is described which resistance is reduced by thinning the n-GaAs thickness. The fabricated rectifier archived 81.7% RF-DC conversion efficiency at the input power of 26 dBm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Space Solar Power Systems / Microwave Wireless Power Transmission / Rectenna / Rectifier / 5.8 GHz-band |
| Paper # | WPT2016-3,MW2016-3 |
| Date of Issue | 2016-04-14 (WPT, MW) |
| Conference Information | |
| Committee | MW / WPT |
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| Conference Date | 2016/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Wireless Power Transfer / Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) / Naoki Shinohara(Kyoto Univ.) |
| Vice Chair | Masashi Nakatsugawa(NTT) / Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) |
| Secretary | Masashi Nakatsugawa(NTT) / Takao Kuki(Panasonic) / Kenjiro Nishikawa(Kagoshima Univ.) / (Toyohashi Univ. of Tech.) |
| Assistant | Ryo Ishikawa(Univ. of Electro-Comm.) / Naoto Sekiya(Univ. of Yamanashi) / Takashi Hikagae(Hokkaido Univ.) / Tsunayuki Yamamoto(Yamaguchi Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Wireless Power Transfer |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode |
| Sub Title (in English) | |
| Keyword(1) | Space Solar Power Systems |
| Keyword(2) | Microwave Wireless Power Transmission |
| Keyword(3) | Rectenna |
| Keyword(4) | Rectifier |
| Keyword(5) | 5.8 GHz-band |
| 1st Author's Name | Marika Nakamura |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 2nd Author's Name | Yutaro Yamaguchi |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 3rd Author's Name | Masaomi Tsuru |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 4th Author's Name | Yasuki Aihara |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 5th Author's Name | Jun Shimokawatoko |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 6th Author's Name | Yukihiro Homma |
| 6th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| 7th Author's Name | Eiji Taniguchi |
| 7th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Co.) |
| Date | 2016-04-21 |
| Paper # | WPT2016-3,MW2016-3 |
| Volume (vol) | vol.116 |
| Number (no) | WPT-12,MW-13 |
| Page | pp.pp.11-15(WPT), pp.11-15(MW), |
| #Pages | 5 |
| Date of Issue | 2016-04-14 (WPT, MW) |