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Presentation |
2016-04-21 11:30
A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) |
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WPT2016-3 MW2016-3 Link to ES Tech. Rep. Archives: MW2016-3 |
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