| Presentation | 2015-11-26 Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo, Jun Suda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characterized by Hall-effect measurements for analysis of the hole concentration and mobility. The Mg-doped p-GaN with the thickness of $1~mumbox{m}$ was grown on free-standing GaN substrate by metal-organic vapor-phase epitaxy, the threading dislocation density of which was $4times 10^{6}~mbox{cm}^{-2}$ measured by cathodoluminescence mapping. Hall-effect measurements of the p-GaN were carried out at a temperature in the range from 160 to 450K. It was revealed a low compensation ratio of less than 1% and the hole mobility of $33~mbox{cm}^2mbox{/Vs}$ at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium nitride / metal-organic vapor-phase epitaxy / lightly-Mg doped / Hall effect / hole density / hole mobility |
| Paper # | ED2015-72,CPM2015-107,LQE2015-104 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements |
| Sub Title (in English) | |
| Keyword(1) | Gallium nitride |
| Keyword(2) | metal-organic vapor-phase epitaxy |
| Keyword(3) | lightly-Mg doped |
| Keyword(4) | Hall effect |
| Keyword(5) | hole density |
| Keyword(6) | hole mobility |
| 1st Author's Name | Masahiro Horita |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Shinya Takashima |
| 2nd Author's Affiliation | Fuji Electric Co., Ltd.(Fuji Electric) |
| 3rd Author's Name | Ryo Tanaka |
| 3rd Author's Affiliation | Fuji Electric Co., Ltd.(Fuji Electric) |
| 4th Author's Name | Hideaki Matsuyama |
| 4th Author's Affiliation | Fuji Electric Co., Ltd.(Fuji Electric) |
| 5th Author's Name | Katsunori Ueno |
| 5th Author's Affiliation | Fuji Electric Co., Ltd.(Fuji Electric) |
| 6th Author's Name | Masaharu Edo |
| 6th Author's Affiliation | Fuji Electric Co., Ltd.(Fuji Electric) |
| 7th Author's Name | Jun Suda |
| 7th Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2015-11-26 |
| Paper # | ED2015-72,CPM2015-107,LQE2015-104 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.21-25(ED), pp.21-25(CPM), pp.21-25(LQE), |
| #Pages | 5 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |