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2015-11-26 13:10
Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) |
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ED2015-72 CPM2015-107 LQE2015-104 Link to ES Tech. Rep. Archives: ED2015-72 CPM2015-107 LQE2015-104 |
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