| Presentation | 2015-11-27 Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electron microscope (SEM) was used to compare the surface conditions, and X-ray diffractometry (XRD) was employed to determine the crystal quality. HEMT structures using each of the single AlN layers as an initial AlN layer were grown. Atomic Force Microscope (AFM) and Transmission Electron Microscope (TEM) were used to observe the surface and the dislocation of each of the HEMT samples. The vertical direction leakage current characteristics of each HEMT sample were measured using a semiconductor parameter analyzer. As a result, Surface pit density of the HEMT structure has strong correlation with a vertical direction leakage current of the HEMT structure and crystallinity of the initial AlN layer. Threading dislocations of the HEMT structure is generated from the initial AlN layer, dislocations forming the surface pits was mixed dislocations. From these results, it is presumed that a mixed dislocation of the HEMT structure is the path of the vertical direction leakage current. For the vertical direction leakage current reduction in the AlGaN / GaN HEMT structure on Si substrate, it is presumed that crystallinity improvement of the initial AlN layer is effective. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon substrate / AlGaN/GaN HEMT / the vertical direction leakage current / initial AlN layer |
| Paper # | ED2015-83,CPM2015-118,LQE2015-115 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate |
| Sub Title (in English) | |
| Keyword(1) | Silicon substrate |
| Keyword(2) | AlGaN/GaN HEMT |
| Keyword(3) | the vertical direction leakage current |
| Keyword(4) | initial AlN layer |
| 1st Author's Name | Yuya Yamaoka |
| 1st Author's Affiliation | Taiyo Nippon Sanso Corp.(TNSC) |
| 2nd Author's Name | Kazuhiro Ito |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 3rd Author's Name | Akinori Ubukata |
| 3rd Author's Affiliation | Taiyo Nippon Sanso Corp.(TNSC) |
| 4th Author's Name | Toshiya Tabuchi |
| 4th Author's Affiliation | Taiyo Nippon Sanso Corp.(TNSC) |
| 5th Author's Name | Koh Matsumoto |
| 5th Author's Affiliation | Taiyo Nippon Sanso Corp.(TNSC) |
| 6th Author's Name | Takashi Egawa |
| 6th Author's Affiliation | Nagoya Institute of Technology(NITech) |
| Date | 2015-11-27 |
| Paper # | ED2015-83,CPM2015-118,LQE2015-115 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.77-80(ED), pp.77-80(CPM), pp.77-80(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |