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Presentation |
2015-11-27 11:40
Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) |
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ED2015-83 CPM2015-118 LQE2015-115 Link to ES Tech. Rep. Archives: ED2015-83 CPM2015-118 LQE2015-115 |
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