| Presentation | 2020-11-26 High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selectively regrown n+-GaN contact layer were fabricated. The ohmic contacts were formed via the self-alignment selective-area growth (SAG) process consisting of the local-area recess etching and subsequent refilling process with a highly-Si-doped n+-GaN layer by metalorganic chemical vapor deposition (MOCVD). The contact resistance is drastically reduced from 10.5 Ωmm to 2.5 Ωmm by using the self-alignment SAG contacts. In addition, the fabricated MIS-HFETs exhibited good pinch-off characteristics with highly improved on-state performance. That is, the device with a gate length of 1.5 μm and a drain-to-source length of 9.5 μm exhibited a high drain current density of over 300 mAmm-1 with a drain-to-source resistance of approximately 25 Ω mm. Furthermore, the fabricated devices also show a high off-state breakdown voltage of 1220 V at a gate-to-drain length of 10 μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Group-III nitrides / AlGaN-channel / AlGaInN / HFET / High breakdown voltage |
| Paper # | ED2020-7,CPM2020-28,LQE2020-58 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts |
| Sub Title (in English) | |
| Keyword(1) | Group-III nitrides |
| Keyword(2) | AlGaN-channel |
| Keyword(3) | AlGaInN |
| Keyword(4) | HFET |
| Keyword(5) | High breakdown voltage |
| 1st Author's Name | Akiyoshi Inoue |
| 1st Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 2nd Author's Name | Hiroki Harada |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 3rd Author's Name | Mizuki Yamanaka |
| 3rd Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 5th Author's Name | Makoto Miyoshi |
| 5th Author's Affiliation | Nagoya Institute of Technology(NIT) |
| Date | 2020-11-26 |
| Paper # | ED2020-7,CPM2020-28,LQE2020-58 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.25-28(ED), pp.25-28(CPM), pp.25-28(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |