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2020-11-26 13:30
High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) |
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ED2020-7 CPM2020-28 LQE2020-58 Link to ES Tech. Rep. Archives: ED2020-7 CPM2020-28 LQE2020-58 |
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