| Presentation | 2020-01-31 Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki, Teramoto Akinobu, Shirota Riichiro, Tskatani Shinichiro, Kuroda Rihito, Sugawa Shigetoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for charge injection as a structure to achieve normally-off. The introduction of the injection gate not only avoids damage to the gate insulation film at the period of charge injection, which was a problem of conventional HEMT devices with floating gate, but also suppresses threshold voltage-variation by the charge injection. We show the usefulness of this structure by circuit modeling of this new structure and structural design by numerical calculation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Normally-off / Floating Gate / HEMT / structural design / Injection Gate |
| Paper # | ED2019-104,MW2019-138 |
| Date of Issue | 2020-01-24 (ED, MW) |
| Conference Information | |
| Committee | ED / MW |
|---|---|
| Conference Date | 2020/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Chair | Michihiko Suhara(TMU) / Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Hiroki Fujishiro(Saga Univ.) / Tadashi Kawai(Toyama Pref. Univ.) / Kensuke Okubo(Utsunomiya Univ.) / Shintaro Shinjo(Fujitsu Labs.) |
| Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) / Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Normally-off |
| Keyword(3) | Floating Gate |
| Keyword(4) | HEMT |
| Keyword(5) | structural design |
| Keyword(6) | Injection Gate |
| 1st Author's Name | Nagumo Kenshi |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 2nd Author's Name | Kimoto Daiki |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Suwa Tomoyuki |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 4th Author's Name | Teramoto Akinobu |
| 4th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 5th Author's Name | Shirota Riichiro |
| 5th Author's Affiliation | National Chiao Tung University(NCTU) |
| 6th Author's Name | Tskatani Shinichiro |
| 6th Author's Affiliation | National Chiao Tung University(NCTU) |
| 7th Author's Name | Kuroda Rihito |
| 7th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 8th Author's Name | Sugawa Shigetoshi |
| 8th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2020-01-31 |
| Paper # | ED2019-104,MW2019-138 |
| Volume (vol) | vol.119 |
| Number (no) | ED-408,MW-409 |
| Page | pp.pp.55-58(ED), pp.55-58(MW), |
| #Pages | 4 |
| Date of Issue | 2020-01-24 (ED, MW) |