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| Presentation | 2020-01-31 16:00 Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.) |
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| PDF Download Link |  ED2019-104 MW2019-138 Link to ES Tech. Rep. Archives: ED2019-104 MW2019-138 |
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