Electronics-Silicon Devices and Materials(Date:2020/11/19)

Presentation
[Invited Talk] Interfacial Dipole in the High-k Gate Stack Reproduced by Classical Molecular Dynamics

Takanobu Watanabe(Waseda Univ.),  

[Date]2020-11-19
[Paper #]SDM2020-23
[Invited Talk] Toward unification of large-scale first-principles calculations and device/process simulators

Atsushi Oshiyama(Nagoya Univ.),  

[Date]2020-11-19
[Paper #]SDM2020-24
[Invited Talk] A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel

Tatsuya Kunikiyo(Renesas Electronics),  Hidenori Sato(Renesas Electronics),  Takeshi Kamino(Renesas Electronics),  Koji Iizuka(Renesas Electronics),  Ken'ichiro Sonoda(Renesas Electronics),  Tomohiro Yamashita(Renesas Electronics),  

[Date]2020-11-19
[Paper #]SDM2020-26
[Invited Talk] Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics

Yusuke Noda(Kanazawa Gakuin Univ.),  

[Date]2020-11-19
[Paper #]SDM2020-25
A model of dark current mechanism in barrier infrared photodetectors

Yen Le Thi(Hanoi University of Science and Technology),  Yoshinari Kamakura(Osaka Institute of Technology),  Nobuya Mori(Graduate School of Engineering, Osaka University,),  

[Date]2020-11-19
[Paper #]SDM2020-27
Estimation of Phonon Mean Free Path in Thin Si Wire by Monte Carlo Simulation

Yuhei Suzuki(OIT),  Yuma Fujita(OIT),  Khotimatul Fauziah(Shizuoka Univ.),  Takuto Nogita(Shizuoka Univ.),  Hiroya Ikeda(Shizuoka Univ.),  Takanobu Watanabe(Waseda Univ.),  Yoshinari Kamakura(OIT),  

[Date]2020-11-19
[Paper #]SDM2020-28
[Invited Talk] SISPAD2020 Review

Saotumi Souma(Kobe Univ),  

[Date]2020-11-19
[Paper #]SDM2020-22
[Invited Talk] Three-dimensional device simulation of Si IGBTs

Naoyuki Shigyo(Tokyo Tech),  Masahiro Watanabe(Tokyo Tech),  Kuniyuki Kakushima(Tokyo Tech),  Takuya Hoshii(Tokyo Tech),  Kazuyoshi Furukawa(Tokyo Tech),  Akira Nakajima(AIST),  Katsumi Satoh(Mitsubishi Electric),  Tomoko Matsudai(Toshiba),  Takuya Saraya(The Univ. of Tokyo),  Toshihiko Takakura(The Univ. of Tokyo),  Kazuo Itou(The Univ. of Tokyo),  Munetoshi Fukui(The Univ. of Tokyo),  Shinichi Suzuki(The Univ. of Tokyo),  Kiyoshi Takeuchi(The Univ. of Tokyo),  Hitoshi Wakabayashi(Tokyo Tech),  Iriya Muneta(Tokyo Tech),  Shin-ichi Nishizawa(Kyushu Univ.),  Kazuo Tsutsui(Tokyo Tech),  Toshiro Hiramoto(The Univ. of Tokyo),  Hiromichi Ohashi(Tokyo Tech),  Hiroshi Iwai(Tokyo Tech),  

[Date]2020-11-20
[Paper #]SDM2020-30
[Invited Talk] Current status of silicon quantum computer development

Kohei Itoh(Keio Univ.),  

[Date]2020-11-20
[Paper #]
[Invited Talk] Power Device Degradation Estimation by Machine Learning of Gate Waveforms

Hiromu Yamasaki(Univ. of Tokyo),  Koutaro Miyazaki(Univ. of Tokyo),  Yang Lo(Univ. of Tokyo),  A. K. M. Mahfuzul Islam(Univ. of Tokyo),  Katsuhiro Hata(Univ. of Tokyo),  Takayasu Sakurai(Univ. of Tokyo),  Makoto Takamiya(Univ. of Tokyo),  

[Date]2020-11-20
[Paper #]SDM2020-29
[Invited Talk] NEGF simulation of band-to-band tunneling in van der Waals heterostructures

Nobuya Mori(Osaka Univ),  Futo Hashimoto(Osaka Univ),  Takaya Mishima(Osaka Univ),  Hajime Tanaka(Osaka Univ),  

[Date]2020-11-20
[Paper #]SDM2020-33
[Invited Talk] Analyses of CVD/ALD thin film deposition mechanism by reactive molecular dynamics simulation and quantum chemical calculation

Takashi Tokumasu(Tohoku Univ.),  Naoya Uene(Tohoku Univ.),  Takuya Mabuchi(Tohoku Univ.),  Masaru Zaitsu(JAC),  Shigeo Yasuhara(JAC),  

[Date]2020-11-20
[Paper #]SDM2020-31
[Invited Talk] Insights into etching properties of atomic layer etching process for dielectric films

Nobuyuki Kuboi(SSS),  

[Date]2020-11-20
[Paper #]SDM2020-32
[Invited Talk] TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation

Hiderhiro Asai(AIST),  Tatsuya Kuroda(Osaka Univ.),  Koichi Fukuda(AIST),  Junichi Attori(AIST),  Tsutomu Ikegami(AIST),  Nobuya Mori(Osaka Univ.),  

[Date]2020-11-20
[Paper #]SDM2020-34