Presentation | 2020-11-20 [Invited Talk] Power Device Degradation Estimation by Machine Learning of Gate Waveforms Hiromu Yamasaki, Koutaro Miyazaki, Yang Lo, A. K. M. Mahfuzul Islam, Katsuhiro Hata, Takayasu Sakurai, Makoto Takamiya, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A method to detect bonding wire lift-off of SiC MOSFETs using machine learning from the gate voltage waveform is proposed. In this paper, we proposed a new method that can be applied to 3-terminal SiC MOSFETs without the need for insulation compared to the conventional bonding wire lift-off detection method and demonstrated its effectiveness by SPICE simulation. By applying a linear regression algorithm to the two parameters extracted from the gate voltage waveform, we succeeded in constructing a bonding wire lift-off detection method that is robust to load current and temperature fluctuations. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Linear regression / Machine learning / Power device / Reliability / Gate |
Paper # | SDM2020-29 |
Date of Issue | 2020-11-12 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2020/11/19(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Virtual conference |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Process, Device, Circuit simulation, etc. |
Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
Secretary | Shunichiro Ohmi(AIST) |
Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Power Device Degradation Estimation by Machine Learning of Gate Waveforms |
Sub Title (in English) | |
Keyword(1) | Linear regression |
Keyword(2) | Machine learning |
Keyword(3) | Power device |
Keyword(4) | Reliability |
Keyword(5) | Gate |
1st Author's Name | Hiromu Yamasaki |
1st Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
2nd Author's Name | Koutaro Miyazaki |
2nd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
3rd Author's Name | Yang Lo |
3rd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
4th Author's Name | A. K. M. Mahfuzul Islam |
4th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
5th Author's Name | Katsuhiro Hata |
5th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
6th Author's Name | Takayasu Sakurai |
6th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
7th Author's Name | Makoto Takamiya |
7th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
Date | 2020-11-20 |
Paper # | SDM2020-29 |
Volume (vol) | vol.120 |
Number (no) | SDM-239 |
Page | pp.pp.32-35(SDM), |
#Pages | 4 |
Date of Issue | 2020-11-12 (SDM) |