Electronics-Silicon Devices and Materials(Date:2009/11/27)

Presentation
表紙

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[Date]2009/11/27
[Paper #]
目次

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[Date]2009/11/27
[Paper #]
Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering

Yusuke Kobayashi,  Nobuyoshi Taguchi,  Masami Susaki,  Masahiro Horita,  Yukiharu Uraoka,  

[Date]2009/11/27
[Paper #]SDM2009-151
Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms

Dai OKAMOTO,  Hiroshi YANO,  Kenji HIRATA,  Tomoaki HATAYAMA,  Takashi FUYUKI,  

[Date]2009/11/27
[Paper #]SDM2009-152
Change of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiation

Takunori NOJIRI,  Hideki YANAGISAWA,  Yoshiko MYOJIN,  Hideharu MATSUURA,  Takeshi OHSHIMA,  

[Date]2009/11/27
[Paper #]SDM2009-153
Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation : dopant-density dependence

Hideki YANAGISAWA,  Kozo NISHINO,  Takunori NOJIRI,  Hideharu MATSUURA,  Takeshi OHSHIMA,  

[Date]2009/11/27
[Paper #]SDM2009-154
Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation

Kozo NISHINO,  Hideki YAnAGISAWA,  Takunori NOJIRI,  Hideharu MATSUURA,  Takeshi OHSHIMA,  

[Date]2009/11/27
[Paper #]SDM2009-155
Electrochemical measurement by a potenitiostat using thin-film transistors

Kosuke Bundo,  Yoshiki Imuro,  Koushi Setu,  Yuki Sagawa,  Mutsumi Kimura,  

[Date]2009/11/27
[Paper #]SDM2009-156
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs

Yoshinari KAMAKURA,  Takashi HIMUKASHI,  Hiroshi TSUJI,  Kenji TANIGUCHI,  

[Date]2009/11/27
[Paper #]SDM2009-157
Si substrate processing by ethanol cluster ion beam technique

Hiroshi MUKAI,  Hiromichi RYUTO,  Mitsuaki TAKEUCHI,  Gikan TAKAOKA,  

[Date]2009/11/27
[Paper #]SDM2009-158
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs

Y. Nishida,  K. Eikyu,  A. Shimizu,  T. Yamashita,  H. Oda,  Y. Inoue,  K. Shibahara,  

[Date]2009/11/27
[Paper #]SDM2009-159
Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector) : Evaluation by simulation

Seigo KITANOYA,  Takayuki MIYAKE,  Yukimasa TANIGUCHI,  Hideharu MATSUURA,  

[Date]2009/11/27
[Paper #]SDM2009-160
Investigation of LTPS TFT flash memory using crystallized 3-dimentonal substrate by green laser irradiation

Kazunori ICHIKAWA,  Masahiro MATSUE,  Hiroshi AKAMATSU,  Yukiharu URAOKA,  

[Date]2009/11/27
[Paper #]SDM2009-161
Application of thin-film device to artificial retina

Yuta Miura,  Takeshi Ogura,  Shiro Ohno,  Tomohisa Hachia,  Yoshitaka Nishizaki,  Takehiko Yamashita,  Takehiro Shima,  Mutsumi Kimura,  

[Date]2009/11/27
[Paper #]SDM2009-162
Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate

Akito Hara,  Tsutomu Sato,  

[Date]2009/11/27
[Paper #]SDM2009-163
Neural Network of Device Level using Poly-Si TFT

D. Mshima,  J. Taniguchi,  T. Kasakawa,  H. tabata,  R. Onodera,  H. Kojima,  M. Kimura,  

[Date]2009/11/27
[Paper #]SDM2009-164
Crystallization of a-Si Film via Quasi-Nuclei Formed by Laser Plasma Soft X-Ray Irradiation

Nobuya ISODA,  Naoto MATSUO,  Sho AMANO,  Akira Heya,  Shuji MIYAMOTO,  Takayasu MOCHIZUKI,  

[Date]2009/11/27
[Paper #]SDM2009-165
Formation of High Quality SiO_2 and SiO_2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing

Yasuo HIROSHIGE,  Seiichiro HIGASHI,  Yusuke MIYAZAKI,  Kazuya MATSUMOTO,  Seiichi MIYAZAKI,  

[Date]2009/11/27
[Paper #]SDM2009-166
Stability Improvement of Printer Ink

Tomohiro Oba,  Shinya Maeta,  Masaki Yamaguchi,  

[Date]2009/11/27
[Paper #]SDM2009-167
Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM

Tatsuya IWATA,  Yusuke NISHI,  Tsunenobu KIMOTO,  

[Date]2009/11/27
[Paper #]SDM2009-168
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