Presentation 2009-12-04
Si substrate processing by ethanol cluster ion beam technique
Hiroshi MUKAI, Hiromichi RYUTO, Mitsuaki TAKEUCHI, Gikan TAKAOKA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Irradiation effect of an ethanol cluster ion beam on a photoresist masked silicon surface was investigated to examine the possibility of the application of an ethanol cluster ion beam. The sputtered depth in silicon induced by the ethanol cluster ion beam was approximately the same as that in photoresist. The test pattern of photoresist mask was successfully reproduced on the silicon substrate irradiated with an ethanol cluster ion beams to a silicon processing.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cluster ion beam / Surface modification / Sputtering / Ethanol
Paper # SDM2009-158
Date of Issue

Conference Information
Committee SDM
Conference Date 2009/11/27(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Si substrate processing by ethanol cluster ion beam technique
Sub Title (in English)
Keyword(1) Cluster ion beam
Keyword(2) Surface modification
Keyword(3) Sputtering
Keyword(4) Ethanol
1st Author's Name Hiroshi MUKAI
1st Author's Affiliation Photonics and Electronics Science and Engineering Center, Kyoto University()
2nd Author's Name Hiromichi RYUTO
2nd Author's Affiliation Photonics and Electronics Science and Engineering Center, Kyoto University
3rd Author's Name Mitsuaki TAKEUCHI
3rd Author's Affiliation Photonics and Electronics Science and Engineering Center, Kyoto University
4th Author's Name Gikan TAKAOKA
4th Author's Affiliation Photonics and Electronics Science and Engineering Center, Kyoto University
Date 2009-12-04
Paper # SDM2009-158
Volume (vol) vol.109
Number (no) 321
Page pp.pp.-
#Pages 3
Date of Issue