Electronics-Silicon Devices and Materials(Date:2003/03/11)

Presentation
表紙

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[Date]2003/3/11
[Paper #]
目次

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[Date]2003/3/11
[Paper #]
Fully Compatible Ferroelectric Capacitor Process to 0.18μm Logic Process for 4Mbit Embedded FRAM

Yoshimasa HORII,  Katsuyoshi MATSUURA,  Kazuaki TAKAI,  Yukinobu HIKOSAKA,  Gen-ichi KOMURO,  Akio ITOH,  Masaki KURASAWA,  Kenji MARUYAMA,  Takashi ESHITA,  

[Date]2003/3/11
[Paper #]SDM2002-264
A Novel Stack Capacitor Cell with SBT film for High Density FeRAM

Takahisa HAYASHI,  Yasushi IGARASHI,  Daisuke INOMATA,  Takashi ICHIMORI,  Toshirou MITSUHASHI,  Kinya ASHIKAGA,  Toshio ITO,  Masaki YOSHIMARU,  Masaya NAGATA,  Shun MITARAI,  Hironori GODIIN,  Tsutomu NAGAHAMA,  Chiharu ISOBE,  Hiroyuki MORIYA,  Mitsuharu SHOJI,  Yasuyuki ITO,  Hideaki KURODA,  Masayoshi SASAKI,  

[Date]2003/3/11
[Paper #]SDM2002-265
Senseing Technique for Low-Voltage Operation FeRAM

Toru ENDO,  Akio ITOH,  Kou NAKAMURA,  Junichi WATANABE,  Yoshimasa HORII,  Takashi ESHITA,  Shoichiro KAWASHIMA,  

[Date]2003/3/11
[Paper #]SDM2002-266
Analysis and Improvement of Data Disturbance Effect in 1T2C type Ferroelectric Memory Cell

Hyun-Soo Kim,  Shuu'ichirou Yamamoto,  Hiroshi Ishiwara,  

[Date]2003/3/11
[Paper #]SDM2002-267
Ferroelectric Nonvolatile Logic Devices

Yoshikazu FUJIMORI,  Takashi NAKAMURA,  Hidemi TAKASU,  Hiromitsu KIMURA,  Takahiro HANYU,  Michitaka KAMEYAMA,  

[Date]2003/3/11
[Paper #]SDM2002-268
The study on CMFS logic circuit using ferroelectric gate FET

Yosuke SATO,  Nobuo HANEJI,  

[Date]2003/3/11
[Paper #]SDM2002-269
Crystal Structure, Property, and Ferroelectric Performance of Si Substituted Ferroelectric Oxides

Yasushi IDEMOTO,  Nobuyuki KOURA,  

[Date]2003/3/11
[Paper #]SDM2002-270
Significant Enhancement of BLT Ferroelectricity Achieved by Low Pressure Calcination Process

Yoshihisa FUJISAKI,  Kunie ISEKI,  Hiroshi ISHIWARA,  

[Date]2003/3/11
[Paper #]SDM2002-271
A study on multilayer formation of (Ba,Sr)TiO_3 thin films on Pt electrodes by pulsed laser deposition method

Kimihiko SATO,  Tatsuyuki HIROCHI,  Tarou ARAKAWA,  Nobuo HANEJI,  

[Date]2003/3/11
[Paper #]SDM2002-272
Physical Properties of Bismuth Titanate Thin Films by Alternately Supplying MOD Method

Masaki Yamaguchi,  Yoichiro Masuda,  

[Date]2003/3/11
[Paper #]SDM2002-273
A Significant Improvement in Memory Retention of MFIS Structure for 1T-type Ferroelectric Memory by Rapid Thermal Annealing

Minoru NODA,  Mitsue TAKAHASHI,  Keiji NISHIMURA,  Masanori OKUYAMA,  

[Date]2003/3/11
[Paper #]SDM2002-274
Preparation of Bi_2SiO_5-Added Ferroelectric Thin Films by Super-Critical Fluid Technique

Takeshi KIJIMA,  Yasuaki HAMADA,  Koji OHASHI,  Junichi KARASAWA,  Eiji NATORI,  Tatsuya SHIMODA,  

[Date]2003/3/11
[Paper #]SDM2002-275
Epitaxial Growth and Electrical Properties of Pb(Zr,Ti)O_3 Uitrathin Films Prepared by MOCVD

Hajime NONOMURA,  Hironori FUJISAWA,  Masaru SHIMIZU,  Hirohiko NIU,  Koichiro HONDA,  

[Date]2003/3/11
[Paper #]SDM2002-276
The Basic and Mass Production Technique for Flash-MOCVD System of Ferroelectric Thin Film

Masayuki Toda,  Taiki Uemura,  Takumi Takahashi,  Masahisa Nawano,  Masaru Umeda,  Masaki Kusuhara,  Hisayoshi Yamoto,  Mituru Fukagawa,  Masafumi Shoji,  Kazuya Akuto,  

[Date]2003/3/11
[Paper #]SDM2002-277
Development of high temperature etching for ferroelectric materials capacitor

Mitsuhiro ENDO,  Masahisa UEDA,  Koukou SUU,  

[Date]2003/3/11
[Paper #]SDM2002-278
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[Date]2003/3/11
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[Date]2003/3/11
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