Presentation 2003/3/11
Physical Properties of Bismuth Titanate Thin Films by Alternately Supplying MOD Method
Masaki Yamaguchi, Yoichiro Masuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Bismuth titanate (Bi_4Ti_3O_<12>) thin films were formed on (100)-oriented silicon wafers derived by alternately supplying metal organic decomposition (MOD) method In the conventional MOD method, it is necessary to carry out the high temperature processes. In contrast, the element was artificially made before the crystallized process by the alternately supplying method. From the experimental result, it was clarified that the alternately supplying method is possible to lower the crystallized temperature of a thin film fabrication.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Bismuth titanate / alternately supplying method / metal-organic decomposition method / bismuth silicate / thin films
Paper # SDM2002-273
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Committee SDM
Conference Date 2003/3/11(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Physical Properties of Bismuth Titanate Thin Films by Alternately Supplying MOD Method
Sub Title (in English)
Keyword(1) Bismuth titanate
Keyword(2) alternately supplying method
Keyword(3) metal-organic decomposition method
Keyword(4) bismuth silicate
Keyword(5) thin films
1st Author's Name Masaki Yamaguchi
1st Author's Affiliation Department of Electrical Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology()
2nd Author's Name Yoichiro Masuda
2nd Author's Affiliation Department of Electrical Engineering, Hachinohe Institute of Technology
Date 2003/3/11
Paper # SDM2002-273
Volume (vol) vol.102
Number (no) 732
Page pp.pp.-
#Pages 5
Date of Issue