Electronics-Silicon Devices and Materials(Date:2001/05/31)

Presentation
表紙

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[Date]2001/5/31
[Paper #]
目次

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[Date]2001/5/31
[Paper #]
Study of rapid thermal oxidation (RTO) and in-situ steam generation (ISSG) thin SiO_2 films by gradient etching preparation

N. Nagai,  H. Hashimoto,  T. Matsunobe,  Y. Muraji,  Y. Otsuka,  

[Date]2001/5/31
[Paper #]SDM2001-44
Study on Direct Tunneling by WKB Method for Very Thin SiO_2 Film on p-type or n-type Si(100)

Y. TAKAMI,  Y. KITAGAWA,  N. MATSUO,  

[Date]2001/5/31
[Paper #]SDM2001-45
Statistical Analysis of Soft and Hard Breakdown in Ultrathin Gate Oxides

Wataru Mizubayashi,  Yuichi Yoshida,  Seiichi Miyazaki,  Masataka Hirose,  

[Date]2001/5/31
[Paper #]SDM2001-46
Influence of Organic Contamination on Hot-Electron Degradation of Thin Thermal Silicon Dioxides

Shin Yokoyama,  Kentaro Shibahara,  Anri Nakajima,  Takamaro Kikkawa,  Hideo Sunami,  Quazi D.M. Khosru,  Takenobu Yoshino,  

[Date]2001/5/31
[Paper #]SDM2001-47
Evaluation of Impurity Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs

H. Murakami,  T. Mihara,  S. Miyazaki,  M. Hirose,  

[Date]2001/5/31
[Paper #]SDM2001-48
Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen

Yukiharu Uraoka,  Kosuke Sasada,  Hiroshi Yano,  Tomoaki Hatayama,  T. Fuyuki,  

[Date]2001/5/31
[Paper #]SDM2001-49
Atomic-layer-deposited silicon-nitride/SiO_2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

Takashi Yoshimoto,  Toshirou Kidera,  Quazi D.M. Khosru,  Anri Nakajima,  Shin Yokoyama,  

[Date]2001/5/31
[Paper #]SDM2001-50
The kinetics at the interface of TiO_2 gate stack

M. Hiratani,  M. Kadoshima,  Y. Shimamoto,  T. Nabatame,  S. Kimura,  

[Date]2001/5/31
[Paper #]SDM2001-51
The Influence of Electrodes on the Characteristics of (Ba,Sr)TiO_3

N. Fujiwara,  H. Yamada,  T. Kidera,  S. Miyazaki,  F. Nishiyama,  T. Kikkawa,  

[Date]2001/5/31
[Paper #]SDM2001-52
[OTHERS]

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[Date]2001/5/31
[Paper #]