Electronics-Silicon Devices and Materials(Date:1999/01/22)

Presentation
表紙

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[Date]1999/1/22
[Paper #]
目次

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[Date]1999/1/22
[Paper #]
Cu interconnect technology for high performance system LSI

Akihiko HARADA,  Motoshige IGARASHI,  Akihiko OHSAKI,  Keiichi HIGASHITANI,  

[Date]1999/1/22
[Paper #]SDM98-184
In-situ TEM observation of electromigration in an Al interconnect

Noriyoshi Shimizu,  Takashi Suzuki,  

[Date]1999/1/22
[Paper #]SDM98-185
0.2μm nMOSFET using EB lithography for all Mask Process

A. Tanabe,  M. Umetani,  I. Fujiwara,  T. Ogura,  K. Kataoka,  S. Hayashida,  A. Matsuo,  H. Sakuraba,  T. Endoh,  F. Masuoka,  

[Date]1999/1/22
[Paper #]SDM98-186
Gas Phase Condensation Reaction and Surface Morphology of Low-k Dielectrics by the(CH_3)_4Si and Oxygen Radical Mixuture

Hitoshi Itoh,  Akiko Nata,  

[Date]1999/1/22
[Paper #]SDM98-187
Fluorinated Amorphous Carbon thin Films Grown by High Density PECVD for Multilevel Interconnections of Integrated Circuits

T. Tatsumi,  K. Endo,  

[Date]1999/1/22
[Paper #]SDM98-188
Process Integration Issue of Low-K Organic SOG for Interlayer Dielectric

T. Yoshie,  S.C. Chen,  J. Kanamori,  

[Date]1999/1/22
[Paper #]SDM98-189
Fabrication of Intermetal Dielectric of Direct-on-metal Structure using Ion-Implanted Organic SOG Films

Naoteru Matsubara,  Hideki Mizuhara,  Hiroyuki Watanabe,  Kaori Misawa,  Keiichi Ueda,  Yasunori Inoue,  Akira Ibaraki,  

[Date]1999/1/22
[Paper #]SDM98-190
Silicon dioxide with low dielectric constant using liquid phase deposition method

Phonekeo CHANTHAMALY,  Taro ARAKAWA,  Nobuo HANEJI,  

[Date]1999/1/22
[Paper #]SDM98-191
[OTHERS]

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[Date]1999/1/22
[Paper #]