| Presentation | 1999/1/22 0.2μm nMOSFET using EB lithography for all Mask Process A. Tanabe, M. Umetani, I. Fujiwara, T. Ogura, K. Kataoka, S. Hayashida, A. Matsuo, H. Sakuraba, T. Endoh, F. Masuoka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A nMOSFETs have been fabricated using EB lithography for all mask process.A gate oxide thickness was 10nm.A good saturation characteristics were obtained for the MOSFET with 0.23μm gate lengh.A drain current of this MOSFET is 0.52mA/μm at supply voltage=3V and threshold voltage is about 0.3V.A 52ps delay time was obtained from a nMOS ring oscillator with 0.21μm gate length at supply voltage=3V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / EB lithography |
| Paper # | SDM98-186 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 0.2μm nMOSFET using EB lithography for all Mask Process |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | EB lithography |
| 1st Author's Name | A. Tanabe |
| 1st Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan() |
| 2nd Author's Name | M. Umetani |
| 2nd Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 3rd Author's Name | I. Fujiwara |
| 3rd Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 4th Author's Name | T. Ogura |
| 4th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 5th Author's Name | K. Kataoka |
| 5th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 6th Author's Name | S. Hayashida |
| 6th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan:Sharp Corporation |
| 7th Author's Name | A. Matsuo |
| 7th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan:ANELVA Corporation |
| 8th Author's Name | H. Sakuraba |
| 8th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 9th Author's Name | T. Endoh |
| 9th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| 10th Author's Name | F. Masuoka |
| 10th Author's Affiliation | Sendai Research Center, Telecommunications Advancement Organization of Japan |
| Date | 1999/1/22 |
| Paper # | SDM98-186 |
| Volume (vol) | vol.98 |
| Number (no) | 555 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |