Electronics-Silicon Devices and Materials(Date:1996/07/19)

Presentation
表紙

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[Date]1996/7/19
[Paper #]
目次

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[Date]1996/7/19
[Paper #]
Bipolar Installed CMOS Technology without Any Process Step Increase for High Speed Cache SRAM

Kazunari Ishimaru,  Minoru Takahashi,  Masahito Nishigohori,  Yasunori Okayama,  Yukari Unno,  Fumitomo Matsuoka,  Masakazu Kakumu,  

[Date]1996/7/19
[Paper #]SDM96-57,ICD96-77
Low-Voltage SRAM Technologies for Battery-Operated Systems

Takahiro Nagano,  Hiroyulki Mizuno,  Masataka Minami,  

[Date]1996/7/19
[Paper #]SDM96-58,ICD96-78
A 0.9V 150MHz 10mW 2-D Discrete Cosine Transform Processor with Variable-Threshold-Voltage (VT) Scheme

Kojiro Suzuki,  Tadahiro Kuroda,  Tetsuya Fujita,  Tetsu Nagamatsu,  Masayuki Murota,  Takayas Sakurai,  

[Date]1996/7/19
[Paper #]SDM96-59,ICD96-79
PUZZLE CONCEPT

Hitoshi Okamura,  Koichi Takeda,  Satoshi Nakamura,  Hideo Toyoshima,  Masahide Takada,  Kiyotaka Imai,  Yasushi Kinoshita,  Hiroshi Yoshida,  Toru Yamazaki,  Shusei Tago,  Masaharu Kobayashi,  

[Date]1996/7/19
[Paper #]SDM96-60,ICD96-80
Pulsed ECR Plasma for Eliminating Profile Distortion Induced by Charge Accumulation

Nobuo Fujiwara,  Takahiro Maruyama,  Masahiro Yoneda,  

[Date]1996/7/19
[Paper #]SDM96-61,ICD96-81
Circuit Technologies for High-Endurance, Low-Power Nonvolatile DRAMs

Tomonori Sekiguchi,  Takeshi Sakata,  Hiroki Fujisawa,  Kazuyoshi Torii,  Kazuhiko Kajigaya,  Katsutaka Kimura,  

[Date]1996/7/19
[Paper #]SDM96-62,ICD96-82
A 167-MHz 1-Mbit CMOS Synchronous Cache SRAM

H. Yahata,  Y. Nishio,  K. Komiyaji,  H. Toyoshima,  A. Hiraishi,  Y. Kinoshita,  

[Date]1996/7/19
[Paper #]SDM96-63,ICD96-83
[OTHERS]

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[Date]1996/7/19
[Paper #]