Electronics-Silicon Devices and Materials(Date:1993/05/28)

Presentation
表紙

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[Date]1993/5/28
[Paper #]
目次

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[Date]1993/5/28
[Paper #]
[CATALOG]

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[Date]1993/5/28
[Paper #]
Study of a PROM used in a smart image sensor

Hajime Akimoto,  Dierickx Bart,  

[Date]1993/5/28
[Paper #]SDM93-22,ICD93-24
A Bit Erasable Flash EEPROM Technology with a Single Floating Gate Transistor Memory Cell

Yasuo Sato,  Shoichi Iwasa,  Kikuzo Sawada,  Kenji Anzai,  Toshio Wada,  

[Date]1993/5/28
[Paper #]SDM93-23,ICD93-25
A Novel Cell Structure Suitable for a 3 Volt Operation,Sector Erase Flash Memory

Hiroshi Onoda,  Yuichi Kunori,  Shinichi Kobayashi,  Makoto Ohi,  Atsushi Fukumoto,  Natsuo Ajika,  Masahiro Hatanaka,  Hirokazu Miyoshi,  

[Date]1993/5/28
[Paper #]SDM93-24,ICD93-26
High-Performance Scaled Flash-Type EEPROMs with Heavy Oxynitrided Tunnel Oxide Films

Hisashi Fukuda,  Masaaki Iwatani,  Masao Tsujimoto,  Takashi Ono,  Akira Uchiyama,  

[Date]1993/5/28
[Paper #]SDM93-25,ICD93-27
Comparison of Current Flash EEPROM Erasing Methods : Stability and How to control

Yoichi Ohshima,  Kuniyoshi Yoshikawa,  Jun'ichi Miyamoto,  Seiji Yamada,  Masamitsu Oshikiri,  Tomoko Yamane,  Yohei Hiura,  Kenji Yamada,  Shigeru Atsumi,  

[Date]1993/5/28
[Paper #]SDM93-26,ICD93-28
Control of flash memory′s Threshold voltage by 2-Step erasing sche me.

Kenichi Oyama,  Hiroki Shirai,  Noriaki Kodama,  Kohji Kanamori,  Kenji Saitoh,  Yoshiaki Hisamune,  Takeshi Okazawa,  

[Date]1993/5/28
[Paper #]SDM93-27,ICD93-29
A New Cylindrical Capacitor Using Hemispherical Grained Si(HSG-Si) for 256Mb DRAMs

Hirohito Watanabe,  Tohru Tatsumi,  Sadayuki Ohnishi,  Takehiko Hamada,  Ichiroh Honma,  Takamaro Kikawa,  Hiroshi Kitajima,  

[Date]1993/5/28
[Paper #]SDM93-28,ICD93-30
Silicon Nitride Thin Deposited by LPCVD with In Situ HF Vapor Cleaning forDRAM Stacked Capacitor

M. Yoshimaru,  N. Inoue,  H. Kuroki,  H. Tamura,  F. Ichikawa,  M. Ino,  

[Date]1993/5/28
[Paper #]SDM93-29,ICD93-31
A Quarter-Micron Planarized Interconnection with Self-Aligned Plug

Kazuyoshi Ueno,  Koichi Ohto,  Kinji Tsunenari,  Kuniko Kikuta,  Takamaro Kikawa,  

[Date]1993/5/28
[Paper #]SDM93-30,ICD93-32
▽(Nabla)-Trench isolation-Isolation technology for 256M DRAMs

Kentaro Shibahara,  Masayuki Hamada,  Shoichi Iwao,  Ken Tokashiki,  Takemitsu Kunio,  

[Date]1993/5/28
[Paper #]SDM93-31,ICD93-33
[OTHERS]

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[Date]1993/5/28
[Paper #]