| Presentation | 1993/5/28 Study of a PROM used in a smart image sensor Hajime Akimoto, Dierickx Bart, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A principle and evaluated results of a PROM which will be used in an MOS-type smart image sensor are described.The PROM utilizes a gm-degradation phenomenon caused by hot-carrier injection as its principle.The principle gives it the following necessary features. The PROM can be processed in a standard CMOS-process.The PROM keeps data without power supply even under UV-light exposure.Owing to a high gain memory cell structure,only 8 seconds is enough for its writing period.It is an enough performance for its application in a smart image sensor |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Image sensor / Error-correction / PROM / Hot-carrier / Electron-trap |
| Paper # | SDM93-22,ICD93-24 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/5/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of a PROM used in a smart image sensor |
| Sub Title (in English) | |
| Keyword(1) | Image sensor |
| Keyword(2) | Error-correction |
| Keyword(3) | PROM |
| Keyword(4) | Hot-carrier |
| Keyword(5) | Electron-trap |
| 1st Author's Name | Hajime Akimoto |
| 1st Author's Affiliation | Central Research Laboratory,Hitachi() |
| 2nd Author's Name | Dierickx Bart |
| 2nd Author's Affiliation | IMEC vzw |
| Date | 1993/5/28 |
| Paper # | SDM93-22,ICD93-24 |
| Volume (vol) | vol.93 |
| Number (no) | 74 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |