Electronics-Integrated Circuits and Devices(Date:2011/04/11)

Presentation
表紙

,  

[Date]2011/4/11
[Paper #]
目次

,  

[Date]2011/4/11
[Paper #]
Trends and Multi-Level-Cell Technology of Spin Transfer Torque Memory

Takashi ISHIGAKI,  Takayuki KAWAHARA,  Riichiro TAKEMURA,  Kazuo ONO,  Kenchi ITO,  Hideo OHNO,  

[Date]2011/4/11
[Paper #]ICD2011-1
A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories

Daisaburo Takashima,  Mitsuhiro Noguchi,  Noboru Shibata,  Kazushige Kanda,  Hiroshi Sukegawa,  Shuso Fujii,  

[Date]2011/4/11
[Paper #]ICD2011-2
ReRAM Test Macro with High Speed Read/Program Circuit : Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput

Keiichi Tsutsui,  Wataru Otsuka,  Koji Miyata,  Makoto Kitagawa,  Tomohito Tsushima,  

[Date]2011/4/11
[Paper #]ICD2011-3
A 151mm^2 64Gbit 2bit/cell NAND Flash Memory Fabricated in 24nm Technology

Koichi Fukuda,  Yoshihisa Watanabe,  Eiichi Makino,  Koichi Kawakami,  Junpei Sato,  Teruo Takagiwa,  Naoaki Kanagawa,  Hitoshi Shiga,  Naoya Tokiwa,  Yoshihiko Shindo,  Toshiaki Edahiro,  Takeshi Ogawa,  Makoto Iwai,  Osamu Nagao,  Junji Musha,  Takatoshi Minamoto,  Kosuke Yanagidaira,  Yuya Suzuki,  Dai Nakamura,  Yoshikazu Hosomura,  Hiromitsu Komai,  Yuka Furuta,  Mai Muramoto,  Rieko Tanaka,  Go Shikata,  Ayako Yuminaka,  Kiyofumi Sakurai,  Manabu Sakai,  Hong Ding,  Mitsuyuki Watanabe,  Yosuke Kato,  Toru Miwa,  Alex Mak,  Masaru Nakamichi,  Gertjan Hemink,  Dana Lee,  Masaaki Higashitani,  Brian Murphy,  Bo Lei,  Yasuhiko Matsunaga,  Kiyomi Naruke,  Takahiko Hara,  

[Date]2011/4/11
[Paper #]ICD2011-4
Highly reliable, high speed Solid-State Drive (SSD)

Ken Takeuchi,  Shuhei Tanakamaru,  Chinglin Hung,  

[Date]2011/4/11
[Paper #]ICD2011-5
Trend in Phase Change Memory and activity in TIA

Norikatsu TAKAURA,  

[Date]2011/4/11
[Paper #]ICD2011-6
3-Dimentional NAND Flash Memories

Seiichi ARITOME,  

[Date]2011/4/11
[Paper #]ICD2011-7
0.45-V Operating Vt-Variation Tolerant 9T/18T Dual-Port SRAM

Koji Yanagida,  Hiroki Noguchi,  Shunsuke Okumura,  Tomoya Takagi,  Koji Kugata,  Masahiko Yoshimoto,  Hiroshi Kawaguchi,  

[Date]2011/4/11
[Paper #]ICD2011-8
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers

Yusuke NIKI,  Atsushi KAWASUMI,  Azuma SUZUKI,  Yasuhisa TAKEYAMA,  Osamu HIRABAYASHI,  Keiichi KUSHIDA,  Fumihiko TACHIBANA,  Yuki FUJIMURA,  Tomoaki YABE,  

[Date]2011/4/11
[Paper #]ICD2011-9
Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs

Koichi TAKEDA,  Toshio SAITO,  Shinobu ASAYAMA,  Yoshiharu AIMOTO,  Hiroyuki KOBATAKE,  Shinya ITO,  Toshifumi TAKAHASHI,  Kiyoshi TAKEUCHI,  Masahiro NOMURA,  Yoshihiro HAYASHI,  

[Date]2011/4/11
[Paper #]ICD2011-10
0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates

Shin-ichi O'uchi,  Kazuhiko Endo,  Yongxun Liu,  Takashi Matsukawa,  Tadashi Nakagawa,  Yuki Ishikawa,  Junichi Tsukada,  Hiromi Yamauchi,  Toshihiro Sekigawa,  Hanpei Koike,  Kunihiro Sakamoto,  Meishoku Masahara,  

[Date]2011/4/11
[Paper #]ICD2011-11
0.5-V, 5.5-nsec Access Time, Bulk-CMOS 8T SRAM with Suspended Bit-Line Read Scheme

Toshikazu SUZUKI,  Shinichi MORIWAKI,  Atsushi KAWASUMI,  Shinji MIYANO,  Hirofumi SHINOHARA,  

[Date]2011/4/11
[Paper #]ICD2011-12
Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor

Kousuke Miyaji,  Kentaro Honda,  Shuhei Tanakamaru,  Shinji Miyano,  Ken Takeuchi,  

[Date]2011/4/11
[Paper #]ICD2011-13
A 12Gb/s Non-Contact Interface with Coupled Transmission Lines

Tsutomu Takeya,  Lan Nan,  Shinya Nakano,  Noriyuki Miura,  Hiroki Ishikuro,  Tadahiro Kuroda,  

[Date]2011/4/11
[Paper #]ICD2011-14
1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing

Kazuo ONO,  Yoshimitsu YANAGAWA,  Akira KOTABE,  Tomonori SEKIGUCHI,  

[Date]2011/4/11
[Paper #]ICD2011-15
Design of Program-voltage (20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System

Teruyoshi HATANAKA,  Koh JOHGUCHI,  Koichi ISHIDA,  Tadashi YASUFUKU,  Makoto TAKAMIYA,  Takayasu SAKURAI,  Ken TAKEUCHI,  

[Date]2011/4/11
[Paper #]ICD2011-16
Basic memory characteristics of HfO_2-CB-RAM

Shigeyuki TSURUTA,  Kentaro KINOSHITA,  Tatsuya NAKABAYASHI,  Satoru KISHIDA,  

[Date]2011/4/11
[Paper #]ICD2011-17
Physical Analysis on ReRAM Filaments Using Atomic Force Microscope

Takatoshi YODA,  Kentaro KINOSHITA,  Satoru KISHIDA,  Toshiya OGIWARA,  Hideo IWAI,  Sei FUKUSHIMA,  Shigeo TANUMA,  

[Date]2011/4/11
[Paper #]ICD2011-18
12>> 1-20hit(25hit)