Presentation 2011-04-19
1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing
Kazuo ONO, Yoshimitsu YANAGAWA, Akira KOTABE, Tomonori SEKIGUCHI,
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Abstract(in English) A novel multicore DRAM architecture with an ultra high bandwidth and a large capacity is proposed for high throughput computing application. The proposed architecture uses three techniques; 1) 5-stage pipelined 16-DRAM cores, 2) an early bar write scheme for an 8-ns cycle array operation, 3) 16-Gbit/s I/O circuit on each 32 through-silicon-via pairs/DRAM core. We confirmed by the circuit simulation assuming 45-nm 1-Gbit chip that the proposed architecture achieves 1-Tbyte/s bandwidth with 19.5-W power consumption. The chip area is estimated to be 52 mm^2.
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Keyword(in English) DRAM / 3-D integration / through silicon via / high throughput computing
Paper # ICD2011-15
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Committee ICD
Conference Date 2011/4/11(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) 1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) 3-D integration
Keyword(3) through silicon via
Keyword(4) high throughput computing
1st Author's Name Kazuo ONO
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Yoshimitsu YANAGAWA
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Akira KOTABE
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name Tomonori SEKIGUCHI
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2011-04-19
Paper # ICD2011-15
Volume (vol) vol.111
Number (no) 6
Page pp.pp.-
#Pages 6
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