IEICE Technical Committee

Electronics-Integrated Circuits and Devices(Date:2002/04/04)

Presentation

[Date]2002/4/4
[Paper #]

Memory Design Using One-Transistor Gain Cell on SOI : Proposal of a Novel RAM Cell of 4F^2 Size

Takashi Ohsawa, Katsuyuki Fujita, Tomoki Higashi, Yoshihisa Iwata, Takeshi Kajiyama, Yoshiaki Asao, Kazumasa Sunouchi,

[Date]2002/4/4
[Paper #]ICD2002-1

0.13um 32Mb/64Mb Embedded DRAM Core with High Efficient Redundancy and Enhanced Testability

Takaharu Tsuji, Hirohito Kikukawa, Shigeki Tomishima, Toshiaki Kawasaki, Shouji Sakamoto, Yoshifumi Fukushima, Hiroaki Tanizaki, Masatoshi Ishikawa, Wataru Abe, Hiroshi Kato, Toshitaka Uchikoba, Toshihiro Inokuchi, Manabu Senoh, Mitsutaka Niiro, Masanao Maruta, Tsukasa Ooishi, Akinori Shibayama, Hideto Hidaka, Kazunari Takahashi,

[Date]2002/4/4
[Paper #]ICD2002-2

Develop of Embedded DRAM Macro based on 0.13umCMOS Logic Process Technology for High Performance Applications

Kohichi Kuroki, Haruyuki Okuda, Tsuyosi Konishi, Takuji Katsuhisa, Mamoru Fujita, Isao Naritake,

[Date]2002/4/4
[Paper #]ICD2002-3

High-Speed Content-Addressable Memory Using Synchronous Hamming Distance Search Circuits

Yusuke OIKE, Makoto IKEDA, Kunihiro ASADA,

[Date]2002/4/4
[Paper #]ICD2002-4

A 44mm^2 4-Bank 8-word Page-Read 64Mb Flash Memory with Flexible Block Redundancy and Fast Accurate Word-line Voltage Controller

Naoya TOKIWA, Toru TANZAWA, Akira UMEZAWA, Tadayuki TAURA, Hitoshi SHIGA, Yoshinori TAKANO, Hiroshi WATANABE, Kazunori MASUDA, Kiyomi NARUKE, Shigeru ATSUMI,

[Date]2002/4/4
[Paper #]ICD2002-5

A 125mm^2 1Gb NAND Flash Memory with 10MB/s Program Throughput

Koichi KAWAI, Kenichi IMAMIYA, Hiroshi NAKAMURA,

[Date]2002/4/4
[Paper #]ICD2002-6

A Giga-Scale Assist-Gate (AG)-AND Type Flash Memory Cell for Content-Downloading Applications

T. KOBAYASHI, Y. ASAGO, H. KURATA, S. SAEKI, Y. GOTO, T. ARIGANE, Y. OKUYAMA, H. KUME, K. KIMURA,

[Date]2002/4/4
[Paper #]ICD2002-7

[OTHERS]

[Date]2002/4/4
[Paper #]