Electronics-Electron Devices(Date:2013/08/01)

Presentation
表紙

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[Date]2013/8/1
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目次

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[Date]2013/8/1
[Paper #]
Ultrashort pulse generators using resonant tunneling diodes with improved power performance

Dongpo WU,  Katsutaro MIZUMAKI,  Jie PAN,  Masayuki MORI,  Koichi MAEZAWA,  

[Date]2013/8/1
[Paper #]ED2013-37
Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps

Jun NAKANO,  Tomoaki SHIBATA,  Hiroki MORITA,  Hiroshi SAKAMOTO,  Masayuki MORI,  Koichi MAEZAWA,  

[Date]2013/8/1
[Paper #]ED2013-38
Dynamics of edge oscillation in a transmission line loaded with regularly spaced tunnel diodes

Koichi NARAHARA,  

[Date]2013/8/1
[Paper #]ED2013-39
Analysis of GaN-based metal-insulator-semiconductor devices by capacitance-frequency-temperature mapping

Toshi-kazu SUZUKI,  Hong-An SHIH,  Masahiro KUDO,  

[Date]2013/8/1
[Paper #]ED2013-40
Application of sputtering-deposited BN films to AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

Yuji YAMAMOTO,  Tuan Quy NGUYEN,  Hong-An SHIH,  Masahiro KUDO,  Toshi-kazu SUZUKI,  

[Date]2013/8/1
[Paper #]ED2013-41
On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals

Hirokuni Tokuda,  Toshikazu Kojima,  Masaaki Kuzuhara,  

[Date]2013/8/1
[Paper #]ED2013-42
Characterization of Al_2O_3/n-Ga_2O_3 MOS diodes

Takafumi KAMIMURA,  MAN Hoi WONG,  Kohei SASAKI,  Krishnamurthy DAIVASIGAMANI,  Akito KURAMATA,  Takekazu MASUI,  Shegenobu YAMAKOSHI,  Masataka HIGASHIWAKI,  

[Date]2013/8/1
[Paper #]ED2013-43
MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors

Shunya FUJINO,  Yuta MIZUNO,  Kazuhiro TAKAOKA,  Masayuki MORI,  Koichi MAEZAWA,  

[Date]2013/8/1
[Paper #]ED2013-44
Effect of Vacuum Annealing on Al_2O_3/GaSb MOS Interfaces

Takahiro GOTOW,  Sachie FUJIKAWA,  Hiroki I. FUJISHIRO,  Mutuo OGURA,  Tetsuji YASUDA,  Tatsuro MAEDA,  

[Date]2013/8/1
[Paper #]ED2013-45
Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions

Ryuto MACHIDA,  Ryusuke TODA,  Keisuke YOSHIKI,  Sachie FUJIKAWA,  Shinsuke HARA,  Katsumi IROKAWA,  Hirofumi MIKI,  Akira KAWAZU,  Hiroki I. FUJISHIRO,  

[Date]2013/8/1
[Paper #]ED2013-46
Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system

Shiro HIDAKA,  Hiuma IWASE,  Masashi AKABORI,  Syoji YAMADA,  Yasutaka IMANAKA,  Tadashi TAKAMASU,  

[Date]2013/8/1
[Paper #]ED2013-47
Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs

Masashi AKABORI,  Tatsuya MURAKAMI,  Syoji YAMADA,  

[Date]2013/8/1
[Paper #]ED2013-48
Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction

Xin Wang,  Masayuki Mori,  Koichi Maezawa,  

[Date]2013/8/1
[Paper #]ED2013-49
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