Presentation | 2013-08-08 On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Temperature dependence of sheet electron density (n_s) and mobility (μ) of the two dimensional electron gas has been investigated in AlGaN/GaN heterostructures deposited with different metal stacks such as Ti/Al, Ti/Au, V/Au, and Ni/Au. It was found that a sudden increase in n_s and a hump in μ were observed with the temperature increase corresponding to the onset of reaction between the bottom metal (Ti, V, or Ni) and the AlGaN layer. At room temperature, Ti/Al showed an order of magnitude higher ns and 70 % higher μ by annealing, while the amount of increase was much less for other metal stacks, indicating that Al played a key role for the increase in n_s and μ. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN heterostructures / Hall measurement / sheet electron density / mobility |
Paper # | ED2013-42 |
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Committee | ED |
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Conference Date | 2013/8/1(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN heterostructures |
Keyword(2) | Hall measurement |
Keyword(3) | sheet electron density |
Keyword(4) | mobility |
1st Author's Name | Hirokuni Tokuda |
1st Author's Affiliation | Graduate School of Engineering, University of Fukui() |
2nd Author's Name | Toshikazu Kojima |
2nd Author's Affiliation | Graduate School of Engineering, University of Fukui |
3rd Author's Name | Masaaki Kuzuhara |
3rd Author's Affiliation | Graduate School of Engineering, University of Fukui |
Date | 2013-08-08 |
Paper # | ED2013-42 |
Volume (vol) | vol.113 |
Number (no) | 176 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |