Presentation 2013-08-08
On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara,
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Abstract(in English) Temperature dependence of sheet electron density (n_s) and mobility (μ) of the two dimensional electron gas has been investigated in AlGaN/GaN heterostructures deposited with different metal stacks such as Ti/Al, Ti/Au, V/Au, and Ni/Au. It was found that a sudden increase in n_s and a hump in μ were observed with the temperature increase corresponding to the onset of reaction between the bottom metal (Ti, V, or Ni) and the AlGaN layer. At room temperature, Ti/Al showed an order of magnitude higher ns and 70 % higher μ by annealing, while the amount of increase was much less for other metal stacks, indicating that Al played a key role for the increase in n_s and μ.
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Keyword(in English) AlGaN/GaN heterostructures / Hall measurement / sheet electron density / mobility
Paper # ED2013-42
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Committee ED
Conference Date 2013/8/1(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Sub Title (in English)
Keyword(1) AlGaN/GaN heterostructures
Keyword(2) Hall measurement
Keyword(3) sheet electron density
Keyword(4) mobility
1st Author's Name Hirokuni Tokuda
1st Author's Affiliation Graduate School of Engineering, University of Fukui()
2nd Author's Name Toshikazu Kojima
2nd Author's Affiliation Graduate School of Engineering, University of Fukui
3rd Author's Name Masaaki Kuzuhara
3rd Author's Affiliation Graduate School of Engineering, University of Fukui
Date 2013-08-08
Paper # ED2013-42
Volume (vol) vol.113
Number (no) 176
Page pp.pp.-
#Pages 4
Date of Issue