Electronics-Electron Devices(Date:2004/01/12)

Presentation
表紙

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[Date]2004/1/12
[Paper #]
目次

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[Date]2004/1/12
[Paper #]
Transition performance of response time for microstrip-line type liquid crystal devices

Katsuhiko SAITO,  Ryo NAITO,  Toshihisa KAMEI,  Yozo UTSUMI,  

[Date]2004/1/12
[Paper #]ED2003-194
A Microstrip Composite Right/Left-Handed Transmission Line without Vias

Atsushi SANADA,  Koichi MURAKAMI,  Shuji ASO,  Hiroshi KUBO,  Ikuo AWAI,  

[Date]2004/1/12
[Paper #]ED2003-195
Analysis of Guided Modes in Vertical Strip line Embedded in an NRD guide

Futoshi KUROKI,  Makoto KIMURA,  Tsukasa YONEYAMA,  

[Date]2004/1/12
[Paper #]ED2003-196
A Report on the 33^ European Microwave Conference

Futoshi KUROKI,  Kouichi MURATA,  Hiro-omi UEDA,  Hiroshi NAKANO,  Atsushi SANADA,  Takanobu OHNO,  Kouta MATSUMOTO,  Hiroki TANAKA,  

[Date]2004/1/12
[Paper #]ED2003-197
Carrier Transport and Current Collapse in AlGaN/GaN HEMTs

Takashi MIZUTANI,  Yutaka OHNO,  

[Date]2004/1/12
[Paper #]ED2003-198
Fabrication and Improvement of Schottky Gate Contacts of Ultra-Short-Gate GaN-Based HEMTs

Akira ENDOH,  Yoshimi YAMASHITA,  Keiji IKEDA,  Masataka HIGASHIWAKI,  Kohki HIKOSAKA,  Toshiaki MATSUI,  Satoshi HIYAMIZU,  Takashi MIMURA,  

[Date]2004/1/12
[Paper #]ED2003-199
DC Characteristics of High-Al-Content Al_XGa_<1-x>N HEMTs Grown on 100-mm-diameter Sapphire Substrates

Makoto MIYOSHI,  Masahiro SAKAI,  Subramaniam ARULKUMARAN,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  Takashi JIMBO,  Mitsuhiro TANAKA,  Osamu ODA,  Hiroyuki KATSUKAWA,  

[Date]2004/1/12
[Paper #]ED2003-200
A High Power SPOT Switch 1C using AlGaN/GaN HFETs

Hidetoshi ISHIDA,  Yutaka HIROSE,  Atsuhiko KANDA,  Tomohiro MURATA,  Yoshito IKEDA,  Toshinobu MATSUNO,  Kaoru INOUE,  Yasuhiro UEMOTO,  Tsuyoshi TANAKA,  Takashi EGAWA,  Daisuke UEDA,  

[Date]2004/1/12
[Paper #]ED2003-201
DC-DC Converter Demonstration using 600V GaN-HEMT

Wataru SAITO,  Yoshiharu TAKADA,  Masahiko KURAGUCHI,  Kunio TSUDA,  Ichiro OMURA,  Tsuneo OGURA,  

[Date]2004/1/12
[Paper #]ES2003-202
High Breakdown Voltage and High Power AlGaN/GaN Recessed Gate FET with Field Plate

Tatsuo NAKAYAMA,  Yuji ANDO,  Yasuhiro OKAMOTO,  Takashi INOUE,  Koji HATAYA,  Hironobu MIYAMOTO,  Masaaki KUZUHARA,  

[Date]2004/1/12
[Paper #]ED2003-203
Surface-related effects on GaN-based electron devices

Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]2004/1/12
[Paper #]ED2003-204
Reports on the Asia-Pacific Microwave Conference 2003

Tamotsu NISHINO,  Hiroyuki DEGUCHI,  Hiro-omi UEDA,  Kouji WADA,  Atsushi SANADA,  Masashi HOTTA,  Makoto TAROUMARU,  Jongsuck BAE,  Satoru TAWARA,  

[Date]2004/1/12
[Paper #]ED2003-205
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[Date]2004/1/12
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[Date]2004/1/12
[Paper #]