| Presentation | 2004/1/12 A High Power SPOT Switch 1C using AlGaN/GaN HFETs Hidetoshi ISHIDA, Yutaka HIROSE, Atsuhiko KANDA, Tomohiro MURATA, Yoshito IKEDA, Toshinobu MATSUNO, Kaoru INOUE, Yasuhiro UEMOTO, Tsuyoshi TANAKA, Takashi EGAWA, Daisuke UEDA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A high power SPDT switch 1C using AlGaN/GaN HFETs was demonstrated for the first time. The reduction of on-resistance (Ron) and off-capacitance (Cofif) are necessary to realize GaN switch 1C. A novel Si-doping technique was employed to reduce ohmic contact resistance, which leads to reduction of Ron. Al_2O_3 substrates were adopted to reduce Coff. A GaN SPDT switch 1C with single-stage configuration was designed by using a circuit simulator based on the extracted device parameters. The fabricated SPDT switch 1C showed insertion loss of 0.26dB and isolation of 27dB at 1 GHz. An extremely high power handling capability of 43 W was achieved, which is 10 times higher than that of typical GaAs switch ICs. The chip size was reduced to 40% as compared to typical GaAs switch ICs due to the single-stage circuit configuration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / FET / switch / loss / isolation / high power / Al_2O_3 |
| Paper # | ED2003-201 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2004/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Power SPOT Switch 1C using AlGaN/GaN HFETs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | FET |
| Keyword(3) | switch |
| Keyword(4) | loss |
| Keyword(5) | isolation |
| Keyword(6) | high power |
| Keyword(7) | Al_2O_3 |
| 1st Author's Name | Hidetoshi ISHIDA |
| 1st Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Yutaka HIROSE |
| 2nd Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Atsuhiko KANDA |
| 3rd Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Tomohiro MURATA |
| 4th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Yoshito IKEDA |
| 5th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Toshinobu MATSUNO |
| 6th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Kaoru INOUE |
| 7th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Yasuhiro UEMOTO |
| 8th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Tsuyoshi TANAKA |
| 9th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| 10th Author's Name | Takashi EGAWA |
| 10th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 11th Author's Name | Daisuke UEDA |
| 11th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
| Date | 2004/1/12 |
| Paper # | ED2003-201 |
| Volume (vol) | vol.103 |
| Number (no) | 558 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |