Electronics-Electron Devices(Date:1997/07/14)

Presentation
表紙

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[Date]1997/7/14
[Paper #]
目次

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[Date]1997/7/14
[Paper #]
The mechanism of Schottky-barrier formation and its controllability

K. Hirose,  

[Date]1997/7/14
[Paper #]ED97-65
Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition

T. Okumura,  C. Kaneshiro,  S.-I. Yamamoto,  

[Date]1997/7/14
[Paper #]ED97-66
Control of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism

Taketomo SATO,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]1997/7/14
[Paper #]ED97-67
Control of InP Surface Using an Ultrathin Silicon Interface Control Layer

Hiroshi Takahashi,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1997/7/14
[Paper #]ED97-68
Ohmic contact materials to wide band-gap semiconductors

Yasuo Koide,  Masanori Murakami,  

[Date]1997/7/14
[Paper #]ED97-69
Schottky junctions on phosphidized compound semiconductors

T. Sugino,  J. Shirafuji,  

[Date]1997/7/14
[Paper #]ED97-70
Control of m-V compound semiconductor surface and metal-semiconductor interface by hydrogen radical cleaning.

J. Wada,  T. Maeda,  Y. Matsukura,  H. Tanaka,  

[Date]1997/7/14
[Paper #]ED97-71
Nitridation of GaAs using helicon-wave excited plasma

Akio Hara,  Humio Kasahara,  Satoshi Wada,  Hideaki Ikoma,  

[Date]1997/7/14
[Paper #]ED97-72
Modeling of Schottky Characteristics in Submicron Gate HJFETs

Walter Contrata,  YHji Ando,  

[Date]1997/7/14
[Paper #]ED97-73
Electrical properties of ZnSe/GaAs heterointerface and regrown ZnSe/ZnSe homointerface

Yuji Yamagata,  Koji Fujiwara,  Takayuki Sawada,  Kazuaki Imai,  Isao Tsubono,  

[Date]1997/7/14
[Paper #]ED97-74
[OTHERS]

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[Date]1997/7/14
[Paper #]