Presentation | 1997/7/14 Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition T. Okumura, C. Kaneshiro, S.-I. Yamamoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Ideal Schottky contacts have been fabricated by electrodeposition of metal layers on n-GdAs which was photoanodically etched in the same electrolytic solutions for plating just prior to the deposition. The photocurrent transient measurements can be helpful in determining the applied potential for the photoanode etching. Residual oxide layers even with a thickness less than 1 nm degraded diode characteristics. The index of interface behavior, S=∂φ_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs / Schottky contact / electrodeposition / photoanode etching / electrochemical process |
Paper # | ED97-66 |
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Committee | ED |
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Conference Date | 1997/7/14(1days) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition |
Sub Title (in English) | |
Keyword(1) | GaAs |
Keyword(2) | Schottky contact |
Keyword(3) | electrodeposition |
Keyword(4) | photoanode etching |
Keyword(5) | electrochemical process |
1st Author's Name | T. Okumura |
1st Author's Affiliation | Department of Electrical Engineering, Tokyo Metropolitan University() |
2nd Author's Name | C. Kaneshiro |
2nd Author's Affiliation | Department of Electrical Engineering, Tokyo Metropolitan University:Hokkaido Univ. |
3rd Author's Name | S.-I. Yamamoto |
3rd Author's Affiliation | Department of Electrical Engineering, Tokyo Metropolitan University:Matsushita |
Date | 1997/7/14 |
Paper # | ED97-66 |
Volume (vol) | vol.97 |
Number (no) | 158 |
Page | pp.pp.- |
#Pages | 6 |
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