Presentation 1997/7/14
Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition
T. Okumura, C. Kaneshiro, S.-I. Yamamoto,
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Abstract(in English) Ideal Schottky contacts have been fabricated by electrodeposition of metal layers on n-GdAs which was photoanodically etched in the same electrolytic solutions for plating just prior to the deposition. The photocurrent transient measurements can be helpful in determining the applied potential for the photoanode etching. Residual oxide layers even with a thickness less than 1 nm degraded diode characteristics. The index of interface behavior, S=∂φ_/φ_M, was determined to be about 0.1 with the measured Schottky barrier heights for ideal Sn, Pd, Ni, and Au Schottky diodes.
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Keyword(in English) GaAs / Schottky contact / electrodeposition / photoanode etching / electrochemical process
Paper # ED97-66
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Conference Date 1997/7/14(1days)
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Language JPN
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Title (in English) Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition
Sub Title (in English)
Keyword(1) GaAs
Keyword(2) Schottky contact
Keyword(3) electrodeposition
Keyword(4) photoanode etching
Keyword(5) electrochemical process
1st Author's Name T. Okumura
1st Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University()
2nd Author's Name C. Kaneshiro
2nd Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University:Hokkaido Univ.
3rd Author's Name S.-I. Yamamoto
3rd Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University:Matsushita
Date 1997/7/14
Paper # ED97-66
Volume (vol) vol.97
Number (no) 158
Page pp.pp.-
#Pages 6
Date of Issue