Electronics-Electron Devices(Date:1995/10/19)

Presentation
表紙

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[Date]1995/10/19
[Paper #]
目次

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[Date]1995/10/19
[Paper #]
Threshold voltage and Schottky barrier height shifts of Mo-gate GaAs FET by the gate current under forward bias

T Kimura,  R Shigemasa,  T Ohshima,  

[Date]1995/10/19
[Paper #]ED95-100
High gate-drain breakdown voltage GaAs MESFETs with undoped GaAs layer on ion-implanted channel layer

Hiromasa Fujimoto,  Katsuhiko Kawashima,  Hiroyuki Masato,  Akiyoshi Tamura,  

[Date]1995/10/19
[Paper #]ED95-101
Fabrication of Pt-Gate InP MESFET by In-Situ Electrochemical Process

Shouichi Uno,  Tamotsu Hashizume,  Nan-Jian Wu,  Seiya Kasai,  Hideki Hasegawa,  

[Date]1995/10/19
[Paper #]ED95-102
[OTHERS]

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[Date]1995/10/19
[Paper #]