Electronics-Component Parts and Materials(Date:2000/10/20)

Presentation
表紙

,  

[Date]2000/10/20
[Paper #]
目次

,  

[Date]2000/10/20
[Paper #]
Low Temperature Epitaxial Growth Property of Si Films by ECR Plasma Deposition

Yukio Yoshida,  Yukihiro Takahashi,  Kimihiro Sasaki,  

[Date]2000/10/20
[Paper #]CPM2000-127
Proposal of chemical sputtering method and its application to prepare large grain size poly-Si films

Koji Kamesaki,  Atsushi Masuda,  Akira Izumi,  Hideki Matsumura,  

[Date]2000/10/20
[Paper #]CPM2000-128
Controlling the position of the grain boundary in an Si film crystallized by linearly polarized laser beam

Yasunori Nakata,  Susumu Horita,  

[Date]2000/10/20
[Paper #]CPM2000-129
Low Temperature Growth of 3C-SiC by Triode Plasma CVD Using Monomethylsilane

Tomohiko MAEDA,  Yuzuru NARITA,  Kanji YASUI,  Tadashi AKAHANE,  

[Date]2000/10/20
[Paper #]CPM2000-130
Generation of NH_3 Plasma Using a Helical Antenna and an Attempt of Nitrization of Semiconductor Surfaces

Tatsurou ARAYAMA,  Satoshi OKUTANI,  Kanji YASUI,  Masashi AKAHANE,  

[Date]2000/10/20
[Paper #]CPM2000-131
Preparation of crystalline carbon thin film by hot filament-assisted sputtering

Y. Matsumoto,  S. Takeda,  M. Nakao,  K. Kamimura,  Y. Onuma,  

[Date]2000/10/20
[Paper #]CPM2000-132
Estimation of specific contact resistance for extremely low value resistor

Shinsuke Okada,  Soichiro Ibaraki,  Masato Nakao,  Yosiharu Onuma,  Kiichi Kamimura,  Hidemi Ohe,  Toshiyuki Sakuma,  

[Date]2000/10/20
[Paper #]CPM2000-133
Nb doped SnO_2 transparent conductive oxide films for analog type touch panels

E. Kishio,  N. Kikuchi,  E. Kusano,  H. Nanto,  A. Kinbara,  

[Date]2000/10/20
[Paper #]CPM2000-134
[OTHERS]

,  

[Date]2000/10/20
[Paper #]