Electronics-Electron Devices(Date:2007/01/10)

Presentation
X-band AlGaN/GaN HEMTs with 80W Output Power

Keiichi Matsushita,  Yasushi Kashiwabara,  Kazutoshi Masuda,  Hiroyuki Sakurai,  Shinji Takatsuka,  Kazutaka Takagi,  Hisao Kawasaki,  Yoshiharu Takada,  Kunio Tsuda,  

[Date]2007/1/10
[Paper #]ED2006-238,MW2006-191
High-f_ GaN HEMT with High Breakdown Voltage for Millimeter-wave Applications

Kozo MAKIYAMA,  Toshihiro OHKI,  Kenji IMANISHI,  Masahito KANAMURA,  Naoki HARA,  Toshihide KIKKAWA,  

[Date]2007/1/10
[Paper #]ED2006-239,MW2006-192
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[Date]2007/1/10
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[Date]2007/1/10
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[Date]2007/1/10
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