| Presentation | 2007-01-19 X-band AlGaN/GaN HEMTs with 80W Output Power Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 23.04mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under VDS=30V, CW operating condition at 9.5GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / HEMT / X-band / high power / channel temperature |
| Paper # | ED2006-238,MW2006-191 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | X-band AlGaN/GaN HEMTs with 80W Output Power |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | X-band |
| Keyword(5) | high power |
| Keyword(6) | channel temperature |
| 1st Author's Name | Keiichi Matsushita |
| 1st Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation() |
| 2nd Author's Name | Yasushi Kashiwabara |
| 2nd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 3rd Author's Name | Kazutoshi Masuda |
| 3rd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 4th Author's Name | Hiroyuki Sakurai |
| 4th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 5th Author's Name | Shinji Takatsuka |
| 5th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 6th Author's Name | Kazutaka Takagi |
| 6th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 7th Author's Name | Hisao Kawasaki |
| 7th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
| 8th Author's Name | Yoshiharu Takada |
| 8th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation |
| 9th Author's Name | Kunio Tsuda |
| 9th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation |
| Date | 2007-01-19 |
| Paper # | ED2006-238,MW2006-191 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |