Electronics-Lasers and Quantum Electronics(Date:2008/11/20)

Presentation
Analysis of AlGaN Growth on MOVPE by Computational Simulation

Akira HIRAKO,  Masaya ICHIKAWA,  Ken-ichi NAKAMURA,  Kazuhiro OHKAWA,  

[Date]2008/11/20
[Paper #]ED2008-170,CPM2008-119,LQE2008-114
Luminescence properties from two types of prismatic planes of InGaN

Hisashi KANIE,  Kenichi AKASHI,  Hidemi TUMUKI,  

[Date]2008/11/20
[Paper #]ED2008-171,CPM2008-120,LQE2008-115
Theoretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al) InGaN Alloy Substrates

A. Atsushi YAMAGUCHI,  

[Date]2008/11/20
[Paper #]ED2008-172,CPM2008-121,LQE2008-116
Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs

Atsushi NAKAJIMA,  Keiichi ITAGAKI,  Kazushige HORIO,  

[Date]2008/11/20
[Paper #]ED2008-173,CPM2008-122,LQE2008-117
Optimum Design of AlGaN/GaN HEMTs with a Field Plate

Ryosuke Sakai,  Tomotaka Okai,  Kenji Shiojima,  Masaaki Kuzuhara,  

[Date]2008/11/20
[Paper #]ED2008-174,CPM2008-123,LQE2008-118
Device simulation of HfO_2/AlGaN/GaN MOSFET : effects of HfO_2/AlGaN interface

Yoshihisa HAYASHI,  Shun SUGIURA,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2008/11/20
[Paper #]ED2008-175,CPM2008-124,LQE2008-119
Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO_2 Gate Insulator deposited by ALD

Yuji GODA,  Yoshihisa HAYASHI,  Yutaka OHNO,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2008/11/20
[Paper #]ED2008-176,CPM2008-125,LQE2008-120
Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer

Xu LI,  Masahito KUROUCHI,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  Fumihiko NAKAMURA,  

[Date]2008/11/20
[Paper #]ED2008-177,CPM2008-126,LQE2008-121
An Over 100W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier

Toshihiro OHKI,  Toshihide KIKKAWA,  Masahito KANAMURA,  Kenji IMANISHI,  Kozo MAKIYAMA,  Naoya OKAMOTO,  Kazukiyo JOSHIN,  Naoki HARA,  

[Date]2008/11/20
[Paper #]ED2008-178,CPM2008-127,LQE2008-122
Study on AlGaN/GaN HEMTs on Si (111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/GaN multilayers

Takaaki SUZUE,  Masanori SUZUKI,  Yukiyasu NOMURA,  Takashi EGAWA,  

[Date]2008/11/20
[Paper #]ED2008-179,CPM2008-128,LQE2008-123
Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures

Masanobu HIROKI,  Narihiko MAEDA,  Takashi KOBAYASHI,  

[Date]2008/11/20
[Paper #]ED2008-180,CPM2008-129,LQE2008-124
Depth profiles of strain in AlGaN/GaN heterostructures grown on Si by electron backscatter diffraction technique

Teruki Ishido,  Hisayoshi Matsuo,  Takuma Katayama,  Tetsuzo Ueda,  Kaoru Inoue,  Daisuke Ueda,  

[Date]2008/11/20
[Paper #]ED2008-181,CPM2008-130,LQE2008-125
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero-Structures

Hajime TSUKAHARA,  Seiji NAKAMURA,  Tsugunori OKUMURA,  

[Date]2008/11/20
[Paper #]ED2008-182,CPM2008-131,LQE2008-126
Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors

Noriyuki TAKAHASHI,  Seiji NAKAMURA,  Tsugunori OKUMURA,  

[Date]2008/11/20
[Paper #]ED2008-183,CPM2008-132,LQE2008-127
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[Date]2008/11/20
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