| Presentation | 2008-11-28 Analysis of AlGaN Growth on MOVPE by Computational Simulation Akira HIRAKO, Masaya ICHIKAWA, Ken-ichi NAKAMURA, Kazuhiro OHKAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have reported analysis of reaction pathways in metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlN films by using computational fluid dynamics (CFD) simulations considering radiative heat transfer. AlGaN MOVPE growths are calculated at various reactor pressures, 10-100kPa, in this paper. In the case of 100kPa, it is found that parasitic reactions occur between TMGa, TMAl and NH_3. At low pressure of 10kPa, parasitic reactions suppress since the collision rate among the gaseous molecules are decreases in the lower pressure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / MOVPE / Computational Fluid Dynamics |
| Paper # | ED2008-170,CPM2008-119,LQE2008-114 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of AlGaN Growth on MOVPE by Computational Simulation |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | MOVPE |
| Keyword(3) | Computational Fluid Dynamics |
| 1st Author's Name | Akira HIRAKO |
| 1st Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science() |
| 2nd Author's Name | Masaya ICHIKAWA |
| 2nd Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| 3rd Author's Name | Ken-ichi NAKAMURA |
| 3rd Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| 4th Author's Name | Kazuhiro OHKAWA |
| 4th Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| Date | 2008-11-28 |
| Paper # | ED2008-170,CPM2008-119,LQE2008-114 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |