Electronics-Component Parts and Materials(Date:2008/05/08)

Presentation
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition

Hidenori Ono,  Kazuya Ogawa,  Masashi Kato,  Masaya Ichimura,  

[Date]2008/5/8
[Paper #]ED2008-19,CPM2008-27,SDM2008-39
Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Yoshinori MATSUSHITA,  Masashi KATO,  Masaya ICHIMURA,  Tomoaki HATAYAMA,  Takeshi OSHIMA,  

[Date]2008/5/8
[Paper #]ED2008-20,CPM2008-28,SDM2008-40
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method

Kosuke Kito,  Masashi Kato,  Masaya Ichimura,  

[Date]2008/5/8
[Paper #]ED2008-21,CPM2008-29,SDM2008-41
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